RSX101VA-30FHTR ROHM

Data Sheet AEC-Q101 Qualified Schottky barrier Diode RSX101VA-30FH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 1.1 0.170.1 0.05 1.30.05 Features 1) Small mold type. (TUMD2) 2) Low V F 3) High reliability. TUMD2 Construction Silicon epitaxial planar Structure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) + day Taping specifications (Unit : mm) 1.550.1 0.250.05 2.00.05 4.00.1 0 1.430.05 4.00.1 1.00.2 0 0.90.08 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 30 V RM Reverse voltage (DC) V 30 V R Average rectified forward current Io 1 A I Forward current surge peak (60Hz1cyc) 5 A FSM Junction temperature Tj 150 C Storage temperature 40 to 150 Tstg C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - 0.43 0.47 V I =1A F F I 1 -15 40 AV =5V R R Reverse current I 2 V =30V - 40 200 A R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 2.0 0.8 0.5RSX101VA-30FH Data Sheet 1000000 1000 1000 Ta=150 Ta=150 Ta=125 f=1MHz 100000 Ta=125 10000 100 100 Ta=75 1000 Ta=75 Ta=-25 Ta=25 100 10 10 Ta=25 10 Ta=-25 1 1 1 0.1 0 100 200 300 400 500 600 010 20 30 0 5 10 15 20 25 30 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 500 200 450 Ta=25 Ta=25 Ta=25 190 450 VR=30V f=1MHz IF=1A 180 400 440 n=30pcs VR=0V n=30pcs n=10pcs 350 170 300 160 430 250 150 200 140 420 150 130 AVE:36.59uA 100 120 410 AVE:159.7pF 50 110 AVE:423.3mV 0 100 400 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 30 30 Ta=25 1cyc Ifsm IF=0.5A 25 25 Ifsm 25 IR=1A Irr=0.25*IR 8.3ms 8.3ms 8.3ms 20 20 20 n=10pcs 1cyc 15 15 15 10 10 10 AVE:15.6A 5 5 5 AVE:10.4ns 0 0 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS 30 1000 Mounted on epoxy board 1 IM=10mA IF=0.2A Ifsm 25 0.8 t D=1/2 Rth(j-a) time 1ms 20 0.6 DC 300us Sin(180) 15 100 Rth(j-c) 0.4 10 0.2 5 0 0 10 00.5 11.5 2 1 10 100 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENTIo(A) IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) TRANSIENT REVERSE CURRENT:IR(uA) REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)