Product Information

RSX301LA-30TR

RSX301LA-30TR electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers SCHOTTKY 30V 3A PMDT
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.2339 ea
Line Total: USD 701.7

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2339
6000 : USD 0.2339
9000 : USD 0.2339
12000 : USD 0.2339

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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Additional Infomation About Product

Data Sheet Schottky Barrier Diode RSX301L-30 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 2.0 2.60.2 Features 1)Small power mold type. (PMDS) 5 6 2)Low VF,Low IR 3)High reliability 0.10.02 0.1 PMDS 2.00.2 1.50.2 Construction Silicon epitaxial planar Structure ROHM : PMDS JEDEC : SOD-106 Manufacture Date Taping specifications (Unit : mm) 2.00.05 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit V Reverse voltage (repetitive) 30 V RM Reverse voltage (DC) V 30 V R Average rectified forward current 3 Io A Forward current surge peak (60Hz1cyc)(*1) I 70 A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1)Tc=90C max Mounted on epoxy board. 180Half sine wave Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.42 V I =3.0A F F I 1 -- 90 AV =15V R R Reverse current I 2 - - 200 A V =30V R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.D 4.50.2 1.20.3 5.00.3 5.30.1 0.05 9.50.1 5.50.05 2.0 1.750.1 120.2 4.2RSX301L-30 Data Sheet 10 1000000 Ta=150 1000 Ta=75 Ta=125 f=1MHz Ta=125 100000 1 Ta=150 Ta=25 10000 Ta=75 Ta=-25 1000 100 0.1 Ta=25 100 0.01 Ta=-25 10 10 1 0.001 0 5 10 15 20 25 30 0 5 10 15 20 25 30 0 100 200 300 400 500 600 REVERSE VOLTAGE:VR(V) REVERSE VOLTAGEVR(V) FORWARD VOLTAGEVF(mV) VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS VF-IF CHARACTERISTICS 400 1000 850 Ta=25 Ta=25 Ta=25 900 840 IF=3A f=1MHz VR=30V n=30pcs 390 800 830 VR=0V n=30pcs n=10pcs 700 820 380 600 810 500 800 370 400 790 300 AVE:66.90uA 780 360 200 AVE:800.8pF 770 AVE:379.8mV 100 760 0 350 750 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 300 Ifsm 1cyc Ta=25 IF=0.5A 25 250 Ifsm IR=1A 8.3ms 150 Irr=0.25*IR 8.3ms 8.3ms AVE:178.0A 20 n=10pcs 200 1cyc 100 15 150 10 100 50 AVE:11.8ns 5 50 0 0 0 1 10 100 NUMBER OF CYCLES trr DISPERSION MAP IFSM DISPERSION MAP IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 300 1000 3 IM=100mA IF=1A 250 Ifs Rth(j-a) t time 100 1ms 200 D=1/2 2 DC 300us Rth(j-c) 150 10 Sin(180) 100 1 1 50 0 0 0.1 1 10 100 0123 45 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(uA) TRANSIENT REVERSE CURRENT:IR(uA) REVERSE RECOVERY TIME:trr(ns) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF) DISSIPATION:Pf(W)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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