RSS095N05FU6TB ROHM

RSS095N05 Transistor 4V Drive Nch MOS FET RSS095N05 z Structure z External dimensions (Unit : mm) Silicon N-channel SOP8 5.0 MOS FET 1.75 0.4 ( ) (5) 8 z Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8). (1) (4) 0.2 1.27 1pin mark Each lead has same dimensions z Applications Power switching , DC / DC converter , Inverter z Packaging dimensions Package Taping Code TB Basic ordering unit(pieces) 2500 z Absolute maximum ratings (Ta=25C) z Equivalent circuit Parameter Symbol Limits Unit (8) (7) (6) (5) (8) (7) (6) (5) Drain-source voltage V 45 V DSS Gate-source voltage V 20 V GSS Continuous I 9.5 A D Drain current 2 Pulsed I 38 A DP *1 (1) (2) (3) (4) 1 Continuous I 1.6 A Source current S (1) Source (2) Source (Body diode) Pulsed I 38 A SP *1 (3) Source (4) Gate Total power dissipation P 2W D *2 (1) (2) (3) (4) (5) Drain o (6) Drain Chanel temperature T 150 ch C 1 ESD Protection Diode. (7) Drain o 2 Body Diode. (8) Drain Range of Storage temperature T -55 to +150 C stg A protection diode is included between the gate *1 PW 10Duty cycle1% and the source terminals to protect the diode *2 Mounted on a ceramic board against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. z Thermal resistance Parameter Symbol Limits Unit o Chanel to ambient R 62.5 th(ch-a) * C/W * Mounted on a ceramic board 1/4 3.9 6.0 0.4Min.RSS095N05 Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 45 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 45V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 11 16 m ID= 9.5A, VGS= 10V Static drain-source on-state R 14 20 m I = 9.5A, V = 4.5V DS (on) D GS resistance 15 21 m ID= 9.5A, VGS= 4V Forward transfer admittance Yfs 10.0 SVDS= 10V, ID= 9.5A Input capacitance Ciss 1830 pF VDS= 10V Output capacitance C 410 pF V =0V oss GS Reverse transfer capacitance Crss 210 pF f=1MHz Turn-on delay time td (on) 20 ns VDD 25V ID= 5.0A Rise time tr 35 ns VGS= 10V Turn-off delay time t 78 ns d (off) RL=5 Fall time tf 31 ns RG=10 Total gate charge Qg 18.9 26.5 nC VDD 25V VGS= 5V I = 9.5A Gate-source charge Qgs 4.9 nC D Gate-drain charge Q 7.2 nC RL=2.6 RG=10 gd Pulsed Body diode characteristics (Source-Drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Forward voltage VSD 1.2 V IS= 9.5A, VGS=0V Pulsed 2/4