Si5468DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () I (A) Q (Typ.) DS DS(on) D g Definition 0.028 at V = 10 V 6 GS TrenchFET Power MOSFET 30 3.8 nC 0.034 at V = 4.5 V 6 GS 100 % R Tested g APPLICATIONS System Power 1206-8 ChipFET - Notebook 1 - Netbook D D Load Switch D Low Current DC/DC D D D Marking Code D G G AK XXX S Lot Traceability and Date Code Part Code Bottom View S Ordering Information: Si5468DC-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS a T = 25 C 6 C a T = 70 C 6 C Continuous Drain Current (T = 150 C) I J D a,b, c T = 25 C A 6 a,b, c T = 70 C A 5.5 A I Pulsed Drain Current 30 DM T = 25 C 4.8 C Continuous Source-Drain Diode Current I S b, c T = 25 C 1.9 A T = 25 C 5.7 C T = 70 C 3.6 C Maximum Power Dissipation P W D b, c T = 25 C 2.3 A b, c T = 70 C 1.5 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R Maximum Junction-to-Ambient 45 55 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 18 22 thJF Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 95 C/W. Document Number: 69072 www.vishay.com S09-0316-Rev. A, 02-Mar-09 1Si5468DC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 35 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 6.8 A 0.023 0.028 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6.2 A 0.028 0.034 GS D a g V = 10 V, I = 6.8 A 17 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 435 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 95 pF oss DS GS C Reverse Transfer Capacitance 42 rss V = 15 V, V = 10 V, I = 7.8 A 812 DS GS D Q Total Gate Charge g 3.8 6 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 7.8 A 1.4 gs DS GS D Q Gate-Drain Charge 1.1 gd Gate Resistance R f = 1 MHz 1.5 3.2 4.5 g t Turn-On Delay Time 15 25 d(on) Rise Time t 12 20 V = 15 V, R = 2.4 r DD L I 6.3 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 13 20 d(off) Fall Time t 10 15 f ns t Turn-On Delay Time 510 d(on) Rise Time t 10 15 V = 15 V, R = 2.4 r DD L I 6.3 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 15 25 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 4.2 S C A I Pulse Diode Forward Current 30 SM V I = 6.3 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 25 ns rr Q Body Diode Reverse Recovery Charge 712 nC rr I = 6.3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 9 a ns t Reverse Recovery Rise Time 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69072 2 S09-0316-Rev. A, 02-Mar-09