Si5513CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition g TrenchFET Power MOSFETs 0.055 at V = 4.5 V GS 4 N-Channel 20 2.6 nC 100 % R Tested g g 0.085 at V = 2.5 V GS 4 Compliant to RoHS Directive 2002/95/EC 0.150 at V = - 4.5 V - 3.7 GS P-Channel - 20 3.6 nC 0.255 at V = - 2.5 V - 2.9 GS APPLICATIONS Load Switch for Portable Devices 1206-8 ChipFET 1 D S 1 2 S 1 D G 1 1 G 2 Marking Code D S 1 2 G 1 EG XXX D G 2 2 Lot Traceability and Date Code D 2 Part Code S D 1 2 Bottom View Ordering Information: Si5513CDC-T1-E3 (Lead (Pb)-free) N-Channel MOSFET P-Channel MOSFET Si5513CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 20 - 20 DS V V 12 Gate-Source Voltage GS g T = 25 C - 3.7 C 4 g T = 70 C - 3.0 C 4 Continuous Drain Current (T = 150 C) I J D b, c, g b, c T = 25 C A 4 - 2.4 b, c b, c T = 70 C A A 3.5 - 1.9 I Pulsed Drain Current 10 - 8 DM T = 25 C 2.6 - 2.6 C I Source Drain Current Diode Current S b, c b, c T = 25 C A 1.4 - 1.7 T = 25 C 3.1 3.1 C T = 70 C 2.0 2.0 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 1.7 1.3 b, c b, c T = 70 C A 1.1 0.8 T , T - 55 to 150 Operating Junction and Storage Temperature Range J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit b, f t 5 s R 62 74 77 95 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 32 40 33 40 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 115 C/W for N-Channel and 130 C/W for P-Channel. g. Package limited. Document Number: 68806 www.vishay.com S10-0547-Rev. C, 08-Mar-10 1Si5513CDC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = 0 V, I = 250 A N-Ch 20 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 20 GS D I = 250 A N-Ch 23.7 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 19.5 D mV/C I = 250 A N-Ch - 3.5 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 2.8 D V = V , I = 250 A N-Ch 0.6 1.5 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.6 - 1.5 DS GS D N-Ch 100 I V = 0 V, V = 12 V Gate-Body Leakage nA GSS DS GS P-Ch - 100 V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 20 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V 5 V, V = 4.5 V N-Ch 10 DS GS b I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 8 DS GS V = 4.5 V, I = 4.4 A N-Ch 0.045 0.055 GS D V = - 4.5 V, I = - 2.4 A P-Ch 0.120 0.150 GS D b R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 3.6 A N-Ch 0.065 0.085 GS D V = - 2.5 V, I = - 1.9 A P-Ch 0.204 0.255 GS D V = 10 V, I = 4.4 A N-Ch 12 DS D b g S Forward Transconductance fs V = - 10 V, I = - 2.4 A P-Ch 5 DS D a Dynamic N-Ch 285 C Input Capacitance iss N-Channel P-Ch 252 V = 10 V, V = 0 V, f = 1 MHz DS GS N-Ch 65 C Output Capacitance pF oss P-Ch 62 P-Channel N-Ch 30 V = - 10 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 45 V = 10 V, V = 5 V, I = 4.4 A N-Ch 2.8 4.2 DS GS D V = - 10 V, V = - 5 V, I = - 2.4 A P-Ch 3.9 5.6 DS GS D Total Gate Charge Q g N-Ch 2.6 3.9 N-Channel P-Ch 3.6 5.4 nC V = 10 V, V = 4.5 V, I = 4.4 A DS GS D N-Ch 0.7 Q Gate-Source Charge gs P-Ch 0.6 P-Channel N-Ch 0.5 V = - 10 V, V = - 4.5 V, I = - 2.4 A DS GS D Q Gate-Drain Charge gd P-Ch 1.2 N-Ch 0.6 3 6 R Gate Resistance f = 1 MHz g P-Ch 1.3 6.5 13 www.vishay.com Document Number: 68806 2 S10-0547-Rev. C, 08-Mar-10