Si5517DU Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V R () Q DS DS(on) I (A) g D TrenchFET Power MOSFETs 0.039 at V = 4.5 V 6 GS New Thermally Enhanced PowerPAK 0.045 at V = 2.5 V RoHS N-Channel 20 6 6 nc GS ChipFET Package COMPLIANT 0.055 at V = 1.8 V 6 GS - Small Footprint Area 0.072 at V = - 4.5 V - 6 GS - Low On-Resistance 0.100 at V = - 2.5 V P-Channel - 20 - 6 5.5 nc GS - Thin 0.8 mm Profile 0.131 at V = - 18 V - 6 GS APPLICATIONS PowerPAK ChipFET Dual Complementary MOSFET for Portable Devices 1 - Ideal for Buck-Boost Circuits Marking Code S 1 2 D S 1 2 EA XXX G 1 3 Lot Traceability D 1 and Date Code 8 S 4 2 D 1 Part Code G 2 7 G 2 D 2 G 1 6 D 2 5 Bottom View S D 1 2 N-Channel MOSFET P-Channel MOSFET Ordering Information: Si5517DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit Drain-Source Voltage V 20 - 20 DS V Gate-Source Voltage V 8 GS a a T = 25 C C 6 - 6 a a T = 70 C C 6 - 6 Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 7.2 - 4.6 b, c b, c T = 70 C A A 5.8 - 3.7 Pulsed Drain Current I 20 - 15 DM T = 25 C 6.9 - 6.9 C I Source-Drain Current Diode Current S b, c b, c T = 25 C A 1.9 - 1.9 T = 25 C 8.3 8.3 C T = 70 C 5.3 5.3 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 2.3 2.3 b, c b, c T = 70 C A 1.5 1.5 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit b, f t 5 s R 45 55 45 55 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 12 15 12 15 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (Si5517DU Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V = 0 V, I = 1 mA N-Ch 20 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 1 mA P-Ch - 20 GS D I = 250 A N-Ch 17 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 20 D mV/C I = 250 A N-Ch - 2.6 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 2.4 D V = V , I = 250 A N-Ch 0.4 1 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.4 - 1 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 8 V nA GSS DS GS P-Ch - 100 V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 20 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V 5 V, V = 4.5 V N-Ch 20 DS GS b I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 15 DS GS V = 4.5 V, I = 4.4 A N-Ch 0.032 0.039 GS D V = - 4.5 V, I = - 3.3 A P-Ch 0.060 0.072 GS D V = 2.5 V, I = 4.1 A N-Ch 0.037 0.045 GS D b R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 2.8 A P-Ch 0.083 0.100 GS D V = 1.8 V, I = 1.8 A N-Ch 0.0455 0.055 GS D V = - 1.8 V, I = - 0.76 A P-Ch 0.108 0.131 GS D V = 10 V, I = 4.4 A N-Ch 22 DS D b g S Forward Transconductance fs V = - 10 V, I = - 3.3 A P-Ch 9 DS D a Dynamic N-Ch 520 C Input Capacitance iss N-Channel P-Ch 455 V = 10 V, V = 0 V, f = 1 MHz DS GS N-Ch 100 C Output Capacitance pF oss P-Ch 105 P-Channel N-Ch 60 V = - 10 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 65 V = 10 V, V = 8 V, I = 4.4 A N-Ch 10.5 16 DS GS D V = - 10 V, V = - 8 V, I = - 4.6 A P-Ch 9.1 14 DS GS D Total Gate Charge Q g N-Ch 6 9 N-Channel P-Ch 5.5 8.5 nC V = 10 V, V = 4.5 V, I = 4.4 A DS GS D N-Ch 0.91 Q Gate-Source Charge gs P-Ch 0.75 P-Channel N-Ch 0.7 V = - 10 V, V = - 4.5 V, I = - 1.8 A DS GS D Q Gate-Drain Charge gd P-Ch 1.5 N-Ch 1.9 R Gate Resistance f = 1 MHz g P-Ch 8 www.vishay.com Document Number: 73529 2 S-81449-Rev. B, 23-Jun-08