3.0 mm Si5515CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition g 0.036 at V = 4.5 V GS 4 TrenchFET Power MOSFETs g 0.041 at V = 2.5 V 100 % R Tested N-Channel 20 6.5 nC GS 4 g Compliant to RoHS Directive 2002/95/EC g 0.050 at V = 1.8 V GS 4 g 0.100 at V = - 4.5 V GS - 4 APPLICATIONS g 0.120 at V = - 2.5 V P-Channel - 20 6.2 nC GS - 4 Load Switch for Portable Devices 0.156 at V = - 1.8 V - 3.8 GS 1206-8 ChipFET D S 1 2 1 S 1 Marking Code G 2 D G EH XXX 1 1 Lot Traceability G 1 D S and Date Code 1 2 D Part Code G 2 2 D 2 S D 1 2 Ordering Information: Si5515CDC-T1-E3 (Lead (Pb)-free) Bottom View Si5515CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 20 - 20 DS V V 8 Gate-Source Voltage GS g g T = 25 C C 4 - 4 g T = 70 C - 3.8 C 4 Continuous Drain Current (T = 150 C) I J D b, c, g b, c T = 25 C A 4 - 3.1 b, c, g b, c T = 70 C A A 4 - 2.5 I Pulsed Drain Current 20 - 10 DM T = 25 C 2.6 - 2.6 C I Source Drain Current Diode Current S b, c b, c T = 25 C A 1.7 - 1.7 = 25 C T 3.1 3.1 C T = 70 C 2.0 2.0 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 2.1 1.3 b, c b, c T = 70 C A 1.3 0.8 T , T - 55 to 150 Operating Junction and Storage Temperature Range J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit b, f t 5 s R 50 60 77 95 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 30 40 33 40 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 C/W for N-Channel and 130 C/W for P-Channel. g. Package limited. Document Number: 68747 www.vishay.com S10-0548-Rev. B, 08-Mar-10 1 1.8 mmSi5515CDC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V = 0 V, I = 250 A N-Ch 20 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 20 GS D I = 250 A N-Ch 18 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 19 D mV/C I = 250 A N-Ch - 2.7 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 2.5 D V = V , I = 250 A N-Ch 0.4 0.8 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.4 - 0.8 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 8 V nA GSS DS GS P-Ch - 100 V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 20 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V 5 V, V = 4.5 V N-Ch 20 DS GS b I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 10 DS GS V = 4.5 V, I = 6.0 A N-Ch 0.030 0.036 GS D V = - 4.5 V, I = - 3.1 A P-Ch 0.083 0.100 GS D V = 2.5 V, I = 5.6 A N-Ch 0.034 0.041 GS D b R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 2.8 A P-Ch 0.100 0.120 GS D V = 1.8 V, I = 5.1 A N-Ch 0.040 0.050 GS D V = - 1.8 V, I = - 2.5 A P-Ch 0.130 0.156 GS D V = 10 V, I = 6.0 A N-Ch 22.4 DS D b g S Forward Transconductance fs V = - 10 V, I = - 3.1 A P-Ch 9.5 DS D a Dynamic N-Ch 632 C Input Capacitance iss N-Channel P-Ch 455 V = 10 V, V = 0 V, f = 1 MHz DS GS N-Ch 80 C Output Capacitance pF oss P-Ch 70 P-Channel N-Ch 40 V = - 10 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 54 V = 10 V, V = 5 V, I = 6.0 A N-Ch 7.5 11.3 DS GS D V = - 10 V, V = - 5 V, I = - 3.1 A P-Ch 7 11 DS GS D Total Gate Charge Q g N-Ch 6.5 9.8 N-Channel P-Ch 6.2 9.3 nC V = 10 V, V = 4.5 V, I = 6.0 A DS GS D N-Ch 1.1 Q Gate-Source Charge gs P-Ch 0.85 P-Channel N-Ch 0.9 V = - 10 V, V = - 4.5 V, I = - 3.1 A DS GS D Q Gate-Drain Charge gd P-Ch 1.75 N-Ch 0.66 3.3 6.6 R Gate Resistance f = 1 MHz g P-Ch 1.22 6.1 12.2 www.vishay.com Document Number: 68747 2 S10-0548-Rev. B, 08-Mar-10