X-On Electronics has gained recognition as a prominent supplier of SI5515CDC-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5515CDC-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI5515CDC-T1-GE3 Vishay

SI5515CDC-T1-GE3 electronic component of Vishay
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Part No.SI5515CDC-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 4A / 4A N & P-CH MOSFET
Datasheet: SI5515CDC-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.3503 ea
Line Total: USD 1050.9 
Availability - 2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.3503
6000 : USD 0.3427
9000 : USD 0.3333

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.3503
6000 : USD 0.3427
9000 : USD 0.3333

   
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We are delighted to provide the SI5515CDC-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5515CDC-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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3.0 mm Si5515CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition g 0.036 at V = 4.5 V GS 4 TrenchFET Power MOSFETs g 0.041 at V = 2.5 V 100 % R Tested N-Channel 20 6.5 nC GS 4 g Compliant to RoHS Directive 2002/95/EC g 0.050 at V = 1.8 V GS 4 g 0.100 at V = - 4.5 V GS - 4 APPLICATIONS g 0.120 at V = - 2.5 V P-Channel - 20 6.2 nC GS - 4 Load Switch for Portable Devices 0.156 at V = - 1.8 V - 3.8 GS 1206-8 ChipFET D S 1 2 1 S 1 Marking Code G 2 D G EH XXX 1 1 Lot Traceability G 1 D S and Date Code 1 2 D Part Code G 2 2 D 2 S D 1 2 Ordering Information: Si5515CDC-T1-E3 (Lead (Pb)-free) Bottom View Si5515CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 20 - 20 DS V V 8 Gate-Source Voltage GS g g T = 25 C C 4 - 4 g T = 70 C - 3.8 C 4 Continuous Drain Current (T = 150 C) I J D b, c, g b, c T = 25 C A 4 - 3.1 b, c, g b, c T = 70 C A A 4 - 2.5 I Pulsed Drain Current 20 - 10 DM T = 25 C 2.6 - 2.6 C I Source Drain Current Diode Current S b, c b, c T = 25 C A 1.7 - 1.7 = 25 C T 3.1 3.1 C T = 70 C 2.0 2.0 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 2.1 1.3 b, c b, c T = 70 C A 1.3 0.8 T , T - 55 to 150 Operating Junction and Storage Temperature Range J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit b, f t 5 s R 50 60 77 95 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 30 40 33 40 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 C/W for N-Channel and 130 C/W for P-Channel. g. Package limited. Document Number: 68747 www.vishay.com S10-0548-Rev. B, 08-Mar-10 1 1.8 mmSi5515CDC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V = 0 V, I = 250 A N-Ch 20 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 20 GS D I = 250 A N-Ch 18 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 19 D mV/C I = 250 A N-Ch - 2.7 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 2.5 D V = V , I = 250 A N-Ch 0.4 0.8 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.4 - 0.8 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 8 V nA GSS DS GS P-Ch - 100 V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 20 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V 5 V, V = 4.5 V N-Ch 20 DS GS b I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 10 DS GS V = 4.5 V, I = 6.0 A N-Ch 0.030 0.036 GS D V = - 4.5 V, I = - 3.1 A P-Ch 0.083 0.100 GS D V = 2.5 V, I = 5.6 A N-Ch 0.034 0.041 GS D b R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 2.8 A P-Ch 0.100 0.120 GS D V = 1.8 V, I = 5.1 A N-Ch 0.040 0.050 GS D V = - 1.8 V, I = - 2.5 A P-Ch 0.130 0.156 GS D V = 10 V, I = 6.0 A N-Ch 22.4 DS D b g S Forward Transconductance fs V = - 10 V, I = - 3.1 A P-Ch 9.5 DS D a Dynamic N-Ch 632 C Input Capacitance iss N-Channel P-Ch 455 V = 10 V, V = 0 V, f = 1 MHz DS GS N-Ch 80 C Output Capacitance pF oss P-Ch 70 P-Channel N-Ch 40 V = - 10 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 54 V = 10 V, V = 5 V, I = 6.0 A N-Ch 7.5 11.3 DS GS D V = - 10 V, V = - 5 V, I = - 3.1 A P-Ch 7 11 DS GS D Total Gate Charge Q g N-Ch 6.5 9.8 N-Channel P-Ch 6.2 9.3 nC V = 10 V, V = 4.5 V, I = 6.0 A DS GS D N-Ch 1.1 Q Gate-Source Charge gs P-Ch 0.85 P-Channel N-Ch 0.9 V = - 10 V, V = - 4.5 V, I = - 3.1 A DS GS D Q Gate-Drain Charge gd P-Ch 1.75 N-Ch 0.66 3.3 6.6 R Gate Resistance f = 1 MHz g P-Ch 1.22 6.1 12.2 www.vishay.com Document Number: 68747 2 S10-0548-Rev. B, 08-Mar-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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