X-On Electronics has gained recognition as a prominent supplier of SI5515DC-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5515DC-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI5515DC-T1-E3 Vishay

SI5515DC-T1-E3 electronic component of Vishay
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Part No.SI5515DC-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 781-SI5515CDC-T1-GE3
Datasheet: SI5515DC-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
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MOQ : 3000
Multiples : 3000
3000 : USD 0.5672
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MOQ : 1
Multiples : 1
1 : USD 1.4824
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Obsolete
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MOQ : 3000
Multiples : 3000
3000 : USD 0.4936
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Obsolete
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MOQ : 1
Multiples : 1
1 : USD 1.1474
10 : USD 0.9401
100 : USD 0.7221
500 : USD 0.6211
1000 : USD 0.4895
3000 : USD 0.4568
6000 : USD 0.4347
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Obsolete
0
MOQ : 1220
Multiples : 1220
1220 : USD 0.5329
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Obsolete
   
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We are delighted to provide the SI5515DC-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5515DC-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si5515DC Vishay Siliconix Complementary 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.040 at V = 4.5 V 5.9 GS TrenchFET Power MOSFETs N-Channel 20 0.045 at V = 2.5 V 5.6 GS Ultra Low R and Excellent Power DS(on) 0.052 at V = 1.8 V 5.2 GS Handling In Compact Footprint 0.086 at V = - 4.5 V - 4.1 Compliant to RoHS Directive 2002/95/EC GS 0.121 at V = - 2.5 V P-Channel - 20 - 3.4 GS APPLICATIONS 0.171 at V = - 1.8 V - 2.9 GS Load Switching for Portable Devices S 1206-8 ChipFET D 2 1 1 S 1 D G 1 1 G 2 D S 1 2 Marking Code G 1 D G 2 2 EC XXX D 2 Lot Traceability and Date Code Part Code Bottom View D S 2 1 Ordering Information: Si5515DC-T1-E3 (Lead (Pb)-free) P-Channel MOSFET N-Channel MOSFET Si5515DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Unit V Drain-Source Voltage 20 - 20 DS V V Gate-Source Voltage 8 GS T = 25 C 5.9 4.4 - 4.1 - 3 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 4.2 3.1 - 2.9 - 2.2 A A I Pulsed Drain Current 20 - 15 DM a I 1.8 0.9 - 1.8 - 0.9 Continuous Source Current (Diode Conduction) S T = 25 C 2.1 1.1 2.1 1.1 A a P W Maximum Power Dissipation D T = 85 C 1.1 0.6 1.1 0.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 50 60 a R Maximum Junction-to-Ambient thJA Steady State 90 110 C/W Maximum Junction-to-Foot (Drain) Steady State R 30 40 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72221 www.vishay.com S10-0547-Rev. C, 08-Mar-10 1Si5515DC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V , I = 250 A N-Ch 0.4 1.0 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.4 - 1.0 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 8 V nA GSS DS GS P-Ch 100 V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 85 C N-Ch 5 DS GS J V = - 20 V, V = 0 V, T = 85 C P-Ch - 5 DS GS J V 5 V, V = 4.5 V N-Ch 20 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 15 DS GS V = 4.5 V, I = 4.4 A N-Ch 0.032 0.040 GS D V = - 4.5 V, I = - 3 A P-Ch 0.069 0.086 GS D V = 2.5 V, I = 4.1 A N-Ch 0.036 0.045 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 2.5 A P-Ch 0.097 0.121 GS D V = 1.8 V, I = 1.9 A N-Ch 0.042 0.052 GS D V = - 1.8 V, I = - 0.6 A P-Ch 0.137 0.171 GS D V = 10 V, I = 4.4 A N-Ch 22 DS D a g S Forward Transconductance fs V = - 10 V, I = - 3 A P-Ch 8 DS D I = 0.9 A, V = 0 V N-Ch 0.8 1.2 S GS a V V Diode Forward Voltage SD I = - 0.9 A, V = 0 V P-Ch - 0.8 - 1.2 S GS b Dynamic N-Ch 5 7.5 Q Total Gate Charge g N-Channel P-Ch 5.5 8.5 V = 10 V, V = 4.5 V, I = 4.4 A DS GS D N-Ch 0.85 Q Gate-Source Charge nC gs P-Ch 0.91 P-Channel N-Ch 1 V = - 10 V, V = - 4.5 V, I = - 3 A DS GS D Q Gate-Drain Charge gd P-Ch 1.6 N-Ch 20 30 t Turn-On Delay Time d(on) N-Channel P-Ch 18 30 V = 10 V, R = 10 DD L N-Ch 36 55 t Rise Time I 1 A, V = 4.5 V, R = 6 r D GEN g P-Ch 32 50 N-Ch 30 45 P-Channel t Turn-Off Delay Time d(off) ns P-Ch 42 65 V = - 10 V, R = 10 DD L N-Ch 12 20 I - 1 A, V = - 4.5 V, R = 6 D GEN g t Fall Time f P-Ch 26 40 I = 0.9 A, dI/dt = 100 A/s N-Ch 45 90 F Source-Drain Reverse Recovery Time t rr I = - 0.9 A, dI/dt = 100 A/s P-Ch 30 60 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72221 2 S10-0547-Rev. C, 08-Mar-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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