Si5855DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.110 at V = - 4.5 V - 3.6 GS TrenchFET Power MOSFETs - 20 0.160 at V = - 2.5 V - 3.0 GS Ultra Low V Schottky f 0.240 at V = - 1.8 V - 2.4 GS Si5853DC Pin Compatible Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY V (V) f APPLICATIONS V (V) I (A) KA Diode Forward Voltage F Charging Circuit in Portable Devices 20 0.375 V at 1 A 1.0 S K 1206-8 ChipFET 1 A K A G K S Marking Code D G JB XXX Lot Traceability D and Date Code Part Code Bottom View D A Ordering Information: Si5855DC-T1-E3 (Lead (Pb)-free) Si5855DC-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage (MOSFET) - 20 DS Reverse Voltage (Schottky) V 20 V KA V Gate-Source Voltage (MOSFET) 8 GS T = 25 C - 3.6 - 2.7 A a I Continuous Drain Current (T = 150 C) (MOSFET) D J T = 85 C - 2.6 - 1.9 A Pulsed Drain Current (MOSFET) I - 10 DM A a I - 1.8 - 0.9 Continuous Source Current (MOSFET Diode Conduction) S Average Forward Current (Schottky) I 1.0 F I Pulsed Forward Current (Schottky) 7 FM T = 25 C 2.1 1.1 A a Maximum Power Dissipation (MOSFET) T = 85 C 1.1 0.6 A P W D T = 25 C 1.9 1.1 A a Maximum Power Dissipation (Schottky) T = 85 C 1.0 0.56 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1 x 1 FR4 board. b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72232 www.vishay.com S10-0547-Rev. C, 08-Mar-10 1Si5855DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter DeviceSymbol TypicalMaximumUnit MOSFET 50 60 t 5 s Schottky 54 65 a R Junction-to-Ambient thJA MOSFET 90 110 Steady State C/W Schottky 95 115 MOSFET 30 40 Junction-to-Foot Steady State R thJF Schottky 30 40 Notes: a. Surface mounted on 1 x 1 FR4 board. MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.45 - 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 85 C - 5 DS GS J a I V 5 V, V = - 4.5 V - 10 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 2.7 A 0.095 0.110 GS D a R V = - 2.5 V, I = - 2.2 A 0.137 0.160 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 1 A 0.205 0.240 GS D a g V = - 10 V, I = - 2.7 A 7S Forward Transconductance fs DS D a V I = - 0.9 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 5.1 7.7 g Q V = - 10 V, V = - 4.5 V, I = - 2.7 A Gate-Source Charge 1.2 nC gs DS GS D Gate-Drain Charge Q 1.0 gd t Turn-On Delay Time 16 25 d(on) Rise Time t 30 45 V = - 10 V, R = 10 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 30 45 ns d(off) t Fall Time 27 40 f t I = - 0.9 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 20 40 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHOTTKY SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit I = 1 A 0.34 0.375 F V Forward Voltage Drop V F I = 1 A, T = 125 C 0.255 0.290 F J V = 20 V 0.05 0.500 r I V = 20 V, T = 85 C Maximum Reverse Leakage Current 220 mA rm r J V = 20 V, T = 125 C 10 100 r J C V = 10 V Junction Capacitance 90 pF T r www.vishay.com Document Number: 72232 2 S10-0547-Rev. C, 08-Mar-10