Si5913DC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( ) Q (Typ.) I (A) DS DS(on) g D Definition f 0.084 at V = - 10 V GS - 4 LITTLE FOOT Plus Schottky Power MOSFET f - 20 0.108 at V = - 4.5 V 4 nC GS - 4 Compliant to RoHS Directive 2002/95/EC 0.175 at V = - 2.5 V - 3.5 GS APPLICATIONS SCHOTTKY PRODUCT SUMMARY HDD V (V) f - DC/DC Converter a V (V) KA Diode Forward Voltage I (A) F Asynchronous Rectification 20 0.5 at 1 A 2 1206-8 ChipFET S A 1 A K A G K S Marking Code D G DJ XX Lot Traceability D and Date Code Part Code Bottom View D K Ordering Information: Si5913DC-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si5913DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage (MOSFET) - 20 DS V Reverse Voltage (Schottky) 20 V KA V Gate-Source Voltage (MOSFET) 12 GS f T = 25 C - 4 C f T = 70 C - 4 C Continuous Drain Current (T = 150 C) (MOSFET) I J D b, c T = 25 C - 3.7 A b, c T = 70 C - 2.9 A I Pulsed Drain Current (MOSFET) - 15 A DM T = 25 C - 2.6 Continuous Source-Drain Diode Current C I S b, c (MOSFET Diode Conduction) T = 25 C - 1.4 A b I Average Forward Current (Schottky) F 2 Pulsed Forward Current (Schottky) I 5 FM T = 25 C 3.1 C T = 70 C 2.0 C Maximum Power Dissipation (MOSFET) b, c T = 25 C 1.7 A b, c T = 70 C 1.1 A P W D T = 25 C 3.1 C T = 70 C 2.0 C Maximum Power Dissipation (Schottky) b, c T = 25 C 1.3 A b, c T = 70 C 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C g, h 260 Soldering Recommendation (Peak Temperature) Document Number: 68920 www.vishay.com S10-0548-Rev. B, 08-Mar-10 1Si5913DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d R t 5 s 62 74 Maximum Junction-to-Ambient (MOSFET) thJA R Steady State 32 40 Maximum Junction-to-Foot (Drain) (MOSFET) thJF C/W b, e R t 5 s thJA 77 95 Maximum Junction-to-Ambient (Schottky) R Maximum Junction-to-Foot (Drain) (Schottky) Steady State 33 40 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s d. Maximum under steady state conditions is 115 C/W. e. Maximum under steady state conditions is 130 C/W. f. Package limited. g. See Solder Profile (www.vishay.com/doc 73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed an is not required to ensure adequate bottom side soldering interconnection. h. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 20 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.6 - 1.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 10 V - 15 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.7 A 0.070 0.084 GS D a R V = - 4.5 V, I = - 3.2 A 0.090 0.108 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 2.5 A 0.140 0.175 GS D a g V = - 10 V, I = - 3.7 A 6S Forward Transconductance fs DS D b Dynamic C Input Capacitance 330 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 80 pF oss DS GS C Reverse Transfer Capacitance 57 rss V = - 10 V, V = - 10 V, I = - 3.7 A 812 DS GS D Q Total Gate Charge g 46 nC Q V = - 10 V, V = - 4.5 V, I = - 3.7 A Gate-Source Charge 0.8 gs DS GS D Q Gate-Drain Charge 1.4 gd R Gate Resistance f = 1 MHz 1.2 6 12 g t Turn-On Delay Time 36 d(on) t V = - 10 V, R = 3.4 Rise Time 10 20 r DD L t I - 2.9 A, V = - 10 V, R = 1 Turn-Off DelayTime 16 24 d(off) D GEN g t Fall Time 815 f ns t Turn-On Delay Time 18 27 d(on) t V = - 10 V, R = 3.4 Rise Time 40 60 r DD L t I - 2.9 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 18 27 d(off) D GEN g t Fall Time 10 15 f www.vishay.com Document Number: 68920 2 S10-0548-Rev. B, 08-Mar-10