X-On Electronics has gained recognition as a prominent supplier of SI5936DU-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5936DU-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI5936DU-T1-GE3 Vishay

SI5936DU-T1-GE3 electronic component of Vishay
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Part No.SI5936DU-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30V 6.0A 10.4W 30mOhm 10V
Datasheet: SI5936DU-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5203 ea
Line Total: USD 0.52 
Availability - 169639
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.26
6000 : USD 0.26
9000 : USD 0.26
12000 : USD 0.26
15000 : USD 0.26

2243
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7252
10 : USD 0.5707
30 : USD 0.4923
100 : USD 0.4161
500 : USD 0.3703
1000 : USD 0.3475

169639
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5203
10 : USD 0.4521
100 : USD 0.3498
500 : USD 0.3036
1000 : USD 0.2695
3000 : USD 0.2431
6000 : USD 0.2376
9000 : USD 0.2332
24000 : USD 0.2277

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Qg - Gate Charge
Channel Mode
Tradename
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SI5936DU-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5936DU-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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3.0 mm New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R ( ) Max. Q (Typ.) DS DS(on) I (A) g Thermally Enhanced PowerPAK D ChipFET Package 0.030 at V = 10 V 6 GS - Small Footprint Area 30 3.5 nC 0.040 at V = 4.5 V - Low On-Resistance 6 GS - Thin 0.8 mm Profile 100 % R Tested g Material categorization: For definitions of compliance PowerPAK ChipFET Dual Marking Code please see www.vishay.com/doc 99912 CF XXX Lot Traceability APPLICATIONS and Date Code Network Part Code System Power DC/DC D D 1 2 G G 1 2 Bottom View S S 1 2 Ordering Information: Si5936DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS a T = 25 C C 6 a T = 70 C 6 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 6 A b, c T = 70 C A A 5.3 I Pulsed Drain Current (t = 300 s) 25 DM a T = 25 C C 6 I Continuous Source-Drain Diode Current S b, c T = 25 C A 1.9 T = 25 C 10.4 C T = 70 C 6.7 C Maximum Power Dissipation P W D b, c T = 25 C A 2.3 b, c T = 70 C A 1.5 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 43 55 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 9.5 12 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 C/W. Document Number: 62804 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-2729-Rev. A, 12-Nov-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1.8 mmNew Product Si5936DU Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 34 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.4 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.2 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V 10 V, I = 5 A 0.025 0.030 GS D a R Drain-Source On-State Resistance DS(on) V 4.5 V, I = 4 A 0.032 0.040 GS D a g V = 15 V, I = 5 A 11 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 320 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 70 pF oss DS GS C Reverse Transfer Capacitance 38 rss V = 15 V, V = 10 V, I = 7 A 711 DS GS D Q Total Gate Charge g 3.5 5.3 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 7 A 1 gs DS GS D Q Gate-Drain Charge 1.3 gd R Gate Resistance f = 1 MHz 0.8 4 8 g t Turn-On Delay Time 15 30 d(on) t Rise Time V = 15 V, R = 2.8 65 130 r DD L I 5.3 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 15 30 d(off) Fall Time t 10 20 f ns t Turn-On Delay Time 510 d(on) Rise Time t 12 25 V = 15 V, R = 2.8 r DD L I 5.3 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 12 25 d(off) Fall Time t 615 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 6 S C A I Pulse Diode Forward Current 25 SM V I = 5.3 A, V 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 11 20 ns rr Q Body Diode Reverse Recovery Charge 510 nC rr I = 5.3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 6 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 62804 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-2729-Rev. A, 12-Nov-12 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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