Si6423DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ( )I (A) DS DS(on) D TrenchFET Power MOSFET 0.0085 at V = - 4.5 V - 9.5 GS RoHS - 12 0.0106 at V = - 2.5 V - 8.5 GS COMPLIANT APPLICATIONS 0.014 at V = - 1.8 V - 7.5 GS Load Switch S* G TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 S S 3 6 G D 4 5 D Top View Ordering Information: Si6423DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 12 DS V V Gate-Source Voltage 8 GS T = 25 C - 9.5 - 8.2 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 8 - 6.5 A A I Pulsed Drain Current (10 s Pulse Width) - 30 DM a I - 1.35 - 0.95 Continuous Source Current (Diode Conduction) S T = 25 C 1.5 1.05 A a P W Maximum Power Dissipation D T = 70 C 1.0 0.67 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 60 83 a R Maximum Junction-to-Ambient thJA Steady State 100 120 C/W R Maximum Junction-to-Foot Steady State 35 45 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72257 www.vishay.com S-80682-Rev. B, 31-Mar-08 1Si6423DQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 400 A Gate Threshold Voltage - 0.40 - 0.8 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 12 V, V = 0 V, T = 70 C - 10 DS GS J a I V = - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 9.5 A 0.0068 0.0085 GS D a R V = - 2.5 V, I = - 8.5 A 0.0085 0.0106 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 7.5 A 0.0112 0.014 GS D a g V = - 15 V, I = - 9.5 A 45 S Forward Transconductance fs DS D a V I = - 1.3 A, V = 0 V - 0.58 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 74 110 g Gate-Source Charge Q V = - 6 V, V = - 5 V, I = - 9.5 A 9.0 nC gs DS GS D Q Gate-Drain Charge 19 gd Gate Resistance R 3.6 g t Turn-On Delay Time 50 75 d(on) Rise Time t 75 110 V = - 6 V, R = 6 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 270 400 ns d(off) Fall Time t 200 300 f t I = - 1.3 A, di/dt = 100 A/s Source-Drain Reverse Recovery Time 160 250 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 30 V = 5 thru 2 V GS 24 24 1.5 V 1.5 V 18 18 12 12 T = 125 C C 6 6 25 C - 55 C 0 0 0 1234 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72257 2 S-80682-Rev. B, 31-Mar-08 I - Drain Current (A) D I - Drain Current (A) D