Si6433BDQ Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ( )I (A) DS DS(on) D 0.040 at V = - 4.5 V - 4.8 GS - 12 RoHS 0.070 at V = - 2.5 V - 3.6 GS COMPLIANT S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 D D 1 8 must be tied common. S S 2 7 S S 3 6 G D 4 5 D Top View Ordering Information: Si6433BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 12 DS V V Gate-Source Voltage 8 GS T = 25 C - 4.8 - 4.0 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 3.9 - 3.2 A A I Pulsed Drain Current (10 s Pulse Width) - 20 DM a I - 1.35 - 0.95 Continuous Source Current (Diode Conduction) S T = 25 C 1.5 1.05 A a P W Maximum Power Dissipation D T = 70 C 1.0 0.67 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 65 83 a R Maximum Junction-to-Ambient thJA Steady State 100 120 C/W R Maximum Junction-to-Foot (Drain) Steady State 43 52 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72511 www.vishay.com S-80682-Rev. C, 31-Mar-08 1Si6433BDQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.6 - 1.5 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 12 V, V = 0 V, T = 70 C - 25 DS GS J a I V = - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 4.8 A 0.032 0.040 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 3.6 A 0.053 0.070 GS D a g V = - 5 V, I = - 4.8 A 14 S Forward Transconductance fs DS D a V I = - 1.35 A, V = 0 V - 0.77 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 10 15 g Q V = - 6 V, V = - 4.5 V, I = - 4.8 A Gate-Source Charge 1.8 nC gs DS GS D Gate-Drain Charge Q 3 gd R Gate Resistance f = 1 MHz 7.7 g Turn-On Delay Time t 45 70 d(on) t Rise Time V = - 6 V, R = 6 60 90 r DD L I - 1 A, V = - 4.5 V, R = 6 Turn-Off Delay Time t 70 110 ns D GEN g d(off) t Fall Time 35 55 f Source-Drain Reverse Recovery Time t I = - 1.35 A, di/dt = 100 A/s 65 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 4.5 thru 3 V GS 16 16 2.5 V 12 12 8 8 2 V T = 125 C C 4 4 25 C - 55 C 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72511 2 S-80682-Rev. C, 31-Mar-08 I - Drain Current (A) D I - Drain Current (A) D