Si6466ADQ Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) DS DS(on) D TrenchFET Power MOSFETs 0.014 at V = 4.5 V 8.1 GS 20 100 % R Tested RoHS g 0.020 at V = 2.5 V 6.6 GS COMPLIANT D TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. G D D 1 8 S S 2 7 S S 3 6 G D 4 5 S* Top View Ordering Information: Si6466ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 sSteady State Unit Drain-Source Voltage V 20 DS V V Gate-Source Voltage 8 GS T = 25 C 8.1 6.8 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 6.6 5.4 A A I Pulsed Drain Current (10 s Pulse Width) 30 DM a I 1.35 0.95 Continuous Source Current (Diode Conduction) S T = 25 C 1.5 1.05 A a P W Maximum Power Dissipation D T = 70 C 1.0 0.67 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 65 83 a R Maximum Junction-to-Ambient thJA Steady State 100 120 C/W R Maximum Junction-to-Foot Steady State 43 52 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71182 www.vishay.com S-80682-Rev. C, 31-Mar-08 1Si6466ADQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.45 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = 16 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 16 V, V = 0 V, T = 70 C 10 DS GS J a I V = 5 V, V = 4.5 V 20 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 8.1 A 0.011 0.014 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 6.6 A 0.017 0.020 GS D a g V = 10 V, I = 8.1 A 30 S Forward Transconductance fs DS D a V I = 1.35 A, V = 0 V 0.65 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 18 27 g Q V = 10 V, V = 5 V, I = 8.1 A Gate-Source Charge 3.2 nC gs DS GS D Gate-Drain Charge Q 4 gd R Gate Resistance 0.5 1.8 g Turn-On Delay Time t 27 45 d(on) t Rise Time V = 10 V, R = 10 34 50 r DD L I 1 A, V = 4.5 V, R = 6 Turn-Off Delay Time t 76 120 ns D GEN G d(off) t Fall Time 30 50 f Source-Drain Reverse Recovery Time t I = 1.5 A, di/dt = 100 A/s 35 70 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 30 V = 5 thru 2.5 V GS 24 24 2 V 18 18 12 12 T = 125 C C 6 6 1.5 V 25 C - 55 C 0 0 0 2468 10 0.0 0.5 1.0 1.5 2.0 2.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71182 2 S-80682-Rev. C, 31-Mar-08 I - Drain Current (A) D I - Drain Current (A) D