X-On Electronics has gained recognition as a prominent supplier of SI6433BDQ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI6433BDQ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI6433BDQ-T1-GE3 Vishay

SI6433BDQ-T1-GE3 electronic component of Vishay
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Part No.SI6433BDQ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 12V 4.8A 1.5W 40mohm 4.5V
Datasheet: SI6433BDQ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.4022 ea
Line Total: USD 1206.6 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 0.9717
10 : USD 0.8089
100 : USD 0.6463
500 : USD 0.5567
1000 : USD 0.4629
2500 : USD 0.4545

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 1
3000 : USD 0.4022

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI6433BDQ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI6433BDQ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si6423DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ( )I (A) DS DS(on) D TrenchFET Power MOSFET 0.0085 at V = - 4.5 V - 9.5 GS RoHS - 12 0.0106 at V = - 2.5 V - 8.5 GS COMPLIANT APPLICATIONS 0.014 at V = - 1.8 V - 7.5 GS Load Switch S* G TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 S S 3 6 G D 4 5 D Top View Ordering Information: Si6423DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 12 DS V V Gate-Source Voltage 8 GS T = 25 C - 9.5 - 8.2 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 8 - 6.5 A A I Pulsed Drain Current (10 s Pulse Width) - 30 DM a I - 1.35 - 0.95 Continuous Source Current (Diode Conduction) S T = 25 C 1.5 1.05 A a P W Maximum Power Dissipation D T = 70 C 1.0 0.67 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 60 83 a R Maximum Junction-to-Ambient thJA Steady State 100 120 C/W R Maximum Junction-to-Foot Steady State 35 45 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72257 www.vishay.com S-80682-Rev. B, 31-Mar-08 1Si6423DQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 400 A Gate Threshold Voltage - 0.40 - 0.8 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 12 V, V = 0 V, T = 70 C - 10 DS GS J a I V = - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 9.5 A 0.0068 0.0085 GS D a R V = - 2.5 V, I = - 8.5 A 0.0085 0.0106 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 7.5 A 0.0112 0.014 GS D a g V = - 15 V, I = - 9.5 A 45 S Forward Transconductance fs DS D a V I = - 1.3 A, V = 0 V - 0.58 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 74 110 g Gate-Source Charge Q V = - 6 V, V = - 5 V, I = - 9.5 A 9.0 nC gs DS GS D Q Gate-Drain Charge 19 gd Gate Resistance R 3.6 g t Turn-On Delay Time 50 75 d(on) Rise Time t 75 110 V = - 6 V, R = 6 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 270 400 ns d(off) Fall Time t 200 300 f t I = - 1.3 A, di/dt = 100 A/s Source-Drain Reverse Recovery Time 160 250 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 30 V = 5 thru 2 V GS 24 24 1.5 V 1.5 V 18 18 12 12 T = 125 C C 6 6 25 C - 55 C 0 0 0 1234 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72257 2 S-80682-Rev. B, 31-Mar-08 I - Drain Current (A) D I - Drain Current (A) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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