New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFETs a 0.022 at V = 4.5 V GS 6.7 N-Channel 20 6.7 nC RoHS a 0.036 at V = 2.5 V 5.2 GS COMPLIANT APPLICATIONS a 0.030 at V = - 4.5 V - 6.1 GS Load Switch P-Channel - 20 17 nC a 0.045 at V = - 2.5 V - 5.0 GS DC/DC Converter S D 2 1 TSSOP-8 D D 1 1 8 2 G 2 S S 1 2 7 2 S S 1 3 6 2 G 1 G G 4 5 1 2 Top View S D 1 2 Ordering Information: Si6562CDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit V 20 - 20 Drain-Source Voltage DS V Gate-Source Voltage V 12 GS T = 25 C 6.7 - 6.1 C T = 70 C 4.2 - 4.9 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 5.7 - 5.1 b, c b, c T = 70 C A A 4.5 - 4.1 I Pulsed Drain Current 30 - 30 DM T = 25 C 1.3 - 1.4 C I Source Drain Current Diode Current S b, c b, c T = 25 C A 0.9 - 1.0 T = 25 C 1.6 1.7 C T = 70 C 1.0 1.1 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 1.1 1.2 b, c b, c T = 70 C A 0.7 0.76 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit b, d t 10 s R 85 110 81 105 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 62 80 57 75 thJF Notes: a. T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 145 C/W. Document Number: 68954 www.vishay.com S-82575-Rev. A, 27-Oct-08 1New Product Si6562CDQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V = 0 V, I = 250 A N-Ch 20 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 20 GS D I = 250 A N-Ch 22 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 21 D mV/C I = 250 A N-Ch - 3.5 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 3.5 D V = V , I = 250 A N-Ch 0.6 1.5 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.6 - 1.5 DS GS D N-Ch 100 I V = 0 V, V = 12 V Gate-Body Leakage nA GSS DS GS P-Ch 100 V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 20 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V 5 V, V = 4.5 V N-Ch 30 DS GS b I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 30 DS GS V = 4.5 V, I = 5.7 A N-Ch 0.018 0.022 GS D V = - 4.5 V, I = - 5.1 A P-Ch 0.024 0.030 GS D b R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 4.4 A N-Ch 0.029 0.036 GS D V = - 2.5 V, I = - 4.2 A P-Ch 0.036 0.045 GS D V = 10 V, I = 5.7 A N-Ch 17 DS D b g S Forward Transconductance fs V = - 10 V, I = - 5.1 A P-Ch 22 DS D a Dynamic N-Ch 850 C Input Capacitance iss N-Channel P-Ch 1200 V = 10 V, V = 0 V, f = 1 MHz DS GS N-Ch 150 C Output Capacitance pF oss P-Ch 260 P-Channel N-Ch 70 V = - 10 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 45 V = 10 V, V = 10 V, I = 5.7 A N-Ch 15 23 DS GS D V = - 10 V, V = - 10 V, I = - 5.1 A P-Ch 34 51 DS GS D Total Gate Charge Q g N-Ch 6.7 11 N-Channel P-Ch 17 30 nC V = 10 V, V = 4.5 V, I = 5.7 A DS GS D N-Ch 1.8 Q Gate-Source Charge gs P-Ch 3 P-Channel N-Ch 0.9 V = - 10 V, V = - 4.5 V, I = - 5.1 A DS GS D Q Gate-Drain Charge gd P-Ch 5.5 N-Ch 2 R Gate Resistance f = 1 MHz g P-Ch 6 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com Document Number: 68954 2 S-82575-Rev. A, 27-Oct-08