Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ( )I (A) DS DS(on) D 0.030 at V = 4.5 V 4.5 GS RoHS COMPLIANT 0.033 at V = 3.0 V 4.2 GS 20 0.035 at V = 2.5 V 3.9 GS 0.043 at V = 1.8 V 3.6 GS D D 1 2 TSSOP-8 D D 1 8 G G 1 2 1 2 S S 1 2 2 7 S S 1 3 6 2 G G 1 4 5 2 Top View S S 1 2 Ordering Information: Si6926ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 20 DS V Gate-Source Voltage V 8 GS T = 25 C 4.5 4.1 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 3.6 3.3 A A I Pulsed Drain Current (10 s Pulse Width) 20 DM a I 0.83 0.69 Continuous Source Current (Diode Conduction) S T = 25 C 1.0 0.83 A a P W Maximum Power Dissipation D T = 70 C 0.64 0.53 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 90 125 a R Maximum Junction-to-Ambient thJA Steady State 126 150 C/W Maximum Junction-to-Foot (Drain) Steady State R 65 80 thJF Notes: a. Surface Mounted on FR4 board, t 10 s. For SPICE model information via the Worldwide Web: Si6926ADQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min. Max. Unit Typ. Static Gate Threshold Voltage V V = V , I = 250 A 0.40 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C 5 DS GS J b I V 5 V, V = 5 V 10 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 4.5 A 0.024 0.030 GS D V = 3.0 V, I = 4.2 A 0.026 0.033 GS D b R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 3.9 A 0.029 0.035 GS D V = 1.8 V, I = 3.6 A 0.035 0.043 GS D b g V = 10 V, I = 4.5 A 26 S Forward Transconductance fs DS D b V I = 0.83 A, V = 0 V 0.6 1.1 V Diode Forward Voltage SD S GS a Dynamic Q Total Gate Charge 7.5 10.5 g Q V = 10 V, V = 4.5 V, I = 4.5 A Gate-Source Charge 1.2 nC gs DS GS D Q Gate-Drain Charge 1.2 gd R Gate Resistance 1.9 g Turn-On Delay Time t 612 d(on) t Rise Time V = 10 V, R = 10 16 25 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 46 70 ns D GEN g d(off) t Fall Time 915 f Source-Drain Reverse Recovery Time t I = 0.83 A, dI/dt = 100 A/s 20 40 rr F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 5 thru 2 V GS 16 16 12 1.5 V 12 8 8 T = 125 C C 4 4 25 C - 55 C 0 0 0 1234 5 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72754 2 S-81056-Rev. B, 12-May-08 I - Drain Current (A) D I - Drain Current (A) D