Si6954ADQ Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) DS DS(on) D TrenchFET Power MOSFETs: 2.5 V Rated 0.053 at V = 10 V 3.4 GS 30 RoHS 0.075 at V = 4.5 V 2.9 GS COMPLIANT D D 1 2 TSSOP-8 D D 1 8 1 2 G G 1 2 S S 1 2 7 2 S S 1 3 6 2 G G 1 4 5 2 Top View S S 1 2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 sSteady State Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS T = 25 C 3.4 3.1 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 2.7 2.5 A A I Pulsed Drain Current (10 s Pulse Width) 20 DM a I 0.83 0.69 Continuous Source Current (Diode Conduction) S T = 25 C 1.0 0.83 A a P W Maximum Power Dissipation D T = 70 C 0.96 0.53 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 90 125 a R Maximum Junction-to-Ambient thJA Steady State 126 150 C/W R Maximum Junction-to-Foot (Drain) Steady State 65 80 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71130 www.vishay.com S-81221-Rev. C, 02-Jun-08 1Si6954ADQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ. Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 3.4 A 0.044 0.053 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 2.9 A 0.062 0.075 GS D a g V = 15 V, I = 3.4 A 10 S Forward Transconductance fs DS D a V I = 0.83 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 816 g Q V = 10 V, V = 10 V, I = 3.4 A Gate-Source Charge 1.4 nC gs DS GS D Gate-Drain Charge Q 1.2 gd t Turn-On Delay Time 12 20 d(on) Rise Time t 10 20 V = 10 V, R = 10 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN G 23 45 ns d(off) Fall Time t 815 f t I = 0.83 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 25 40 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 10 thru 5 V GS 16 16 4 V 12 12 8 8 T = 125 C C 4 4 3 V 25 C - 55 C 0 0 01234 0 1234 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71130 2 S-81221-Rev. C, 02-Jun-08 I - Drain Current (A) D I - Drain Current (A) D