Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ( )I (A) DS DS(on) D TrenchFET Power MOSFETs Pb-free 0.08 at V = - 4.5 V - 2.5 GS Available - 12 0.105 at V = - 2.5 V - 1.9 GS RoHS* COMPLIANT S S 1 2 TSSOP-8 G G D D 1 2 1 8 1 2 S S 1 2 2 7 Si6943BDQ S S 1 3 6 2 G G 1 4 5 2 Top View D D 1 2 Ordering Information: Si6943BDQ-T1 Si6943BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 12 DS V Gate-Source Voltage V 8 GS T = 25 C - 2.5 - 2.3 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 2.2 - 1.8 A A I Pulsed Drain Current (10 s Pulse Width) - 20 DM a I - 1.0 - 0.7 Continuous Source Current (Diode Conduction) S T = 25 C 1.10 0.80 A a P W Maximum Power Dissipation D T = 70 C 0.70 0.50 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 89 110 a R Maximum Junction-to-Ambient thJA Steady State 120 150 C/W Maximum Junction-to-Foot (Drain) Steady State R 70 90 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72016 www.vishay.com S-81056-Rev. B, 12-May-08 1Si6943BDQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.45 - 0.8 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 9.6 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 9.6 V, V = 0 V, T = 70 C - 5 DS GS J a I V = - 5 V, V = - 4.5 V - 10 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 2.5 A 0.06 0.08 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 1.9 A 0.08 0.105 GS D a g V = - 15 V, I = - 2.5 A 8S Forward Transconductance fs DS D a V I = - 1.0 A, V = 0 V - 0.75 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 5.7 10 g Q V = - 6 V, V = - 4.5 V, I = - 2.5 A Gate-Source Charge 0.8 nC gs DS GS D Gate-Drain Charge Q 1.6 gd t Turn-On Delay Time 15 25 d(on) Rise Time t 35 60 V = - 6 V, R = 6 r DD L I - 1.0 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 35 60 ns d(off) Fall Time t 30 50 f t I = - 1.0 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 30 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = GS 3 V 5 thru 3.5 V T = - 55 C C 25 C 16 16 2.5 V 125 C 12 12 8 8 2 V 4 4 1.5 V 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72016 2 S-81056-Rev. B, 12-May-08 I - Drain Current (A) D I - Drain Current (A) D