Si6562DQ Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) DS DS(on) D Pb-free TrenchFET Power MOSFETS: 2.5 V Rated 0.030 at V = 4.5 V 4.5 GS Available N-Channel 20 0.040 at V = 2.5 V 3.9 GS RoHS* COMPLIANT 0.050 at V = - 4.5 V 3.5 GS P-Channel - 20 0.085 at V = - 2.5 V 2.7 GS D S 1 2 TSSOP-8 G 2 D D 1 1 8 2 G 1 S S 1 2 7 2 Si6562DQ S S 1 3 6 2 G G 4 5 1 2 Top View S D 1 2 Ordering Information: Si6562DQ-T1 Si6562DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-Channel P-ChannelUnit V Drain-Source Voltage 20 - 20 DS V V Gate-Source Voltage 12 12 GS T = 25 C 4.5 3.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 3.6 2.7 A A Pulsed Drain Current I 30 30 DM a I 1.25 - 1.25 Continuous Source Current (Diode Conduction) S T = 25 C 1.0 A a P W Maximum Power Dissipation D T = 70 C 0.64 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol N- or P-Channel Unit a R 125 C/W Maximum Junction-to-Ambient thJA Notes: a. Surface Mounted on FR4 board, t 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70720 www.vishay.com S-81056-Rev. C, 12-May-08 1Si6562DQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V = V , I = 250 A N-Ch 0.6 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.6 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 12 V nA GSS DS GS P-Ch 100 V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C N-Ch 25 DS GS J V = - 20 V, V = 0 V, T = 55 C P-Ch - 25 DS GS J V 5 V, V = 4.5 V N-Ch 30 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 30 DS GS V = 4.5 V, I = 4.5 A N-Ch 0.023 0.030 GS D V = - 4.5 V, I = - 3.5 A P-Ch 0.040 0.050 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 3.9 A N-Ch 0.030 0.040 GS D V = - 2.5 V, I = - 2.7 A P-Ch 0.060 0.085 GS D V = 10 V, I = 4.5 A N-Ch 20 DS D a g S Forward Transconductance fs V = - 10 V, I = - 3.5 A P-Ch 10 DS D I = 1.25 A, V = 0 V N-Ch 0.65 1.2 S GS a V V Diode Forward Voltage SD I = - 1.25 A, V = 0 V P-Ch 0.72 - 1.2 S GS b Dynamic N-Ch 13 25 Q Total Gate Charge g N-Channel P-Ch 14.5 25 V = 15 V, V = 4.5 V, I = 4.5 A DS GS D N-Ch 3.0 Q Gate-Source Charge nC gs P-Ch 3.5 P-Channel N-Ch 3.3 V = - 15 V, V = - 4.5 V, I = - 3.5 A DS GS D Q Gate-Drain Charge gd P-Ch 3.5 N-Ch 22 50 t Turn-On Delay Time d(on) N-Channel P-Ch 27 50 V = 10 V, R = 10 DD L N-Ch 40 80 t Rise Time r I 1 A, V = 10 V, R = 6 D GEN G P-Ch 30 60 N-Ch 50 100 P-Channel t Turn-Off Delay Time d(off) ns P-Ch 57 100 V = - 10 V, R = 10 DD L N-Ch 20 40 I - 1 A, V = - 10 V, R = 6 D GEN G t Fall Time f P-Ch 21 40 I = 1.25 A, dI/dt = 100 A/s N-Ch 30 60 F t Source-Drain Reverse Recovery Time rr I = - 1.25 A, dI/dt = 100 A/s P-Ch 60 100 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70720 2 S-81056-Rev. C, 12-May-08