X-On Electronics has gained recognition as a prominent supplier of SI6562DQ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI6562DQ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI6562DQ-T1-GE3 Vishay

SI6562DQ-T1-GE3 electronic component of Vishay
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Part No.SI6562DQ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET NP-Ch MOSFET 20V 3050mohm 4.5V
Datasheet: SI6562DQ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.9361 ea
Line Total: USD 2808.3 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 1
3000 : USD 0.9361

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI6562DQ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI6562DQ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si6562DQ Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) DS DS(on) D Pb-free TrenchFET Power MOSFETS: 2.5 V Rated 0.030 at V = 4.5 V 4.5 GS Available N-Channel 20 0.040 at V = 2.5 V 3.9 GS RoHS* COMPLIANT 0.050 at V = - 4.5 V 3.5 GS P-Channel - 20 0.085 at V = - 2.5 V 2.7 GS D S 1 2 TSSOP-8 G 2 D D 1 1 8 2 G 1 S S 1 2 7 2 Si6562DQ S S 1 3 6 2 G G 4 5 1 2 Top View S D 1 2 Ordering Information: Si6562DQ-T1 Si6562DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-Channel P-ChannelUnit V Drain-Source Voltage 20 - 20 DS V V Gate-Source Voltage 12 12 GS T = 25 C 4.5 3.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 3.6 2.7 A A Pulsed Drain Current I 30 30 DM a I 1.25 - 1.25 Continuous Source Current (Diode Conduction) S T = 25 C 1.0 A a P W Maximum Power Dissipation D T = 70 C 0.64 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol N- or P-Channel Unit a R 125 C/W Maximum Junction-to-Ambient thJA Notes: a. Surface Mounted on FR4 board, t 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70720 www.vishay.com S-81056-Rev. C, 12-May-08 1Si6562DQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V = V , I = 250 A N-Ch 0.6 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.6 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 12 V nA GSS DS GS P-Ch 100 V = 20 V, V = 0 V N-Ch 1 DS GS V = - 20 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C N-Ch 25 DS GS J V = - 20 V, V = 0 V, T = 55 C P-Ch - 25 DS GS J V 5 V, V = 4.5 V N-Ch 30 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 30 DS GS V = 4.5 V, I = 4.5 A N-Ch 0.023 0.030 GS D V = - 4.5 V, I = - 3.5 A P-Ch 0.040 0.050 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 3.9 A N-Ch 0.030 0.040 GS D V = - 2.5 V, I = - 2.7 A P-Ch 0.060 0.085 GS D V = 10 V, I = 4.5 A N-Ch 20 DS D a g S Forward Transconductance fs V = - 10 V, I = - 3.5 A P-Ch 10 DS D I = 1.25 A, V = 0 V N-Ch 0.65 1.2 S GS a V V Diode Forward Voltage SD I = - 1.25 A, V = 0 V P-Ch 0.72 - 1.2 S GS b Dynamic N-Ch 13 25 Q Total Gate Charge g N-Channel P-Ch 14.5 25 V = 15 V, V = 4.5 V, I = 4.5 A DS GS D N-Ch 3.0 Q Gate-Source Charge nC gs P-Ch 3.5 P-Channel N-Ch 3.3 V = - 15 V, V = - 4.5 V, I = - 3.5 A DS GS D Q Gate-Drain Charge gd P-Ch 3.5 N-Ch 22 50 t Turn-On Delay Time d(on) N-Channel P-Ch 27 50 V = 10 V, R = 10 DD L N-Ch 40 80 t Rise Time r I 1 A, V = 10 V, R = 6 D GEN G P-Ch 30 60 N-Ch 50 100 P-Channel t Turn-Off Delay Time d(off) ns P-Ch 57 100 V = - 10 V, R = 10 DD L N-Ch 20 40 I - 1 A, V = - 10 V, R = 6 D GEN G t Fall Time f P-Ch 21 40 I = 1.25 A, dI/dt = 100 A/s N-Ch 30 60 F t Source-Drain Reverse Recovery Time rr I = - 1.25 A, dI/dt = 100 A/s P-Ch 60 100 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70720 2 S-81056-Rev. C, 12-May-08

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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