X-On Electronics has gained recognition as a prominent supplier of SIHF35N60E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHF35N60E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHF35N60E-GE3 Vishay

SIHF35N60E-GE3 electronic component of Vishay
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Part No.SIHF35N60E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
Datasheet: SIHF35N60E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 2.882 ea
Line Total: USD 2882 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1000
Multiples : 1
1000 : USD 3.3709
2000 : USD 3.3384
2500 : USD 3.3072
3000 : USD 3.276

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 2.882

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIHF35N60E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHF35N60E-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHF35N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY 2 A specific on resistance (m-cm ) reduction of V (V) at T max. 650 25 % DS J Low figure-of-merit (FOM) R x Q R typ. () at 25 C V = 10 V 0.082 on g DS(on) GS Low input capacitance (C ) iss Q max. (nC) 132 g Reduced switching and conduction losses Q (nC) 22 gs Ultra low gate charge (Q ) g Q (nC) 46 gd Avalanche energy rated (UIS) Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS D TO-220 FULLPAK Power factor correction power supplies (PFC) Hard switching PWM stages Computing - Switch mode power supplies (SMPS) G Lighting - Light emitting diode (LED) - High intensity discharge (HID) S Telecom S D G - Server power supplies N-Channel MOSFET Renewable energy - Photovoltaic inverters Industrial - Welding - Induction heating - Motor drives - Battery chargers - Uniterruptable power supplies ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free and Halogen-free SiHF35N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 32 C e Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 20 A C a Pulsed Drain Current I 80 DM Linear Derating Factor 0.31 W/C b Single Pulse Avalanche Energy E 691 mJ AS Maximum Power Dissipation P 39 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 57 J dV/dt V/ns d Reverse Diode dV/dt 31 c Soldering Recommendations (Peak temperature) For 10 s 300 C Mounting Torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J e. Limited by maximum junction temperature. S16-1602-Rev. B, 15-Aug-16 Document Number: 91582 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHF35N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -65 thJA C/W Maximum Junction-to-Case (Drain) -3.2 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V /T -0.70 - V Temperature Coefficient DS J Reference to 25 C, I = 1 mA V/C DS D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 25 DS GS J Drain-Source On-State Resistance R V = 10 V I = 17 A - 0.082 0.094 DS(on) GS D Forward Transconductance g V = 30 V, I = 17 A - 13 - S fs DS D Dynamic Input Capacitance C - 2760 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 118- oss DS f = 1 MHz Reverse Transfer Capacitance C -5- rss pF Effective Output Capacitance, Energy C - 118 - o(er) a Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 429 - o(tr) b Related Total Gate Charge Q -88 132 g Gate-Source Charge Q -2V = 10 V I = 17 A, V = 480 V2- nC gs GS D DS Gate-Drain Charge Q -46- gd Turn-On Delay Time t -29 58 d(on) Rise Time t -61 92 r V = 480 V, I = 17 A, DD D ns Turn-Off Delay Time t -78117 V = 10 V, R = 9.1 d(off) GS g Fall Time t -3264 f Gate Input Resistance R f = 1 MHz, open drain 0.25 0.5 1 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 32 S showing the A integral reverse G Pulsed Diode Forward Current I -- 80 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 17 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 455 910 ns rr T = 25 C, I = I = 17 A, J F S Reverse Recovery Charge Q -8 16 C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -30 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-1602-Rev. B, 15-Aug-16 Document Number: 91582 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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