SiHF6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D TO-220 FULLPAK Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Avalanche energy rated (UIS) Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 S D G N-Channel MOSFET APPLICATIONS Server and telecom power supplies PRODUCT SUMMARY Switch mode power supplies (SMPS) V (V) at T max. 700 DS J Power factor correction power supplies (PFC) R max. ( ) at 25 C V = 10 V 0.6 DS(on) GS Lighting Q max. (nC) 48 g - High-intensity discharge (HID) Q (nC) 6 gs - Fluorescent ballast lighting Q (nC) 11 gd Industrial Configuration Single - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free and Halogen-free SiHF6N65E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage V 30 GS T = 25 C 7 C e Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 5 A C a Pulsed Drain Current I 18 DM Linear Derating Factor 0.63 W/C b Single Pulse Avalanche Energy E 56 mJ AS Maximum Power Dissipation P 31 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 37 J dV/dt V/ns d Reverse Diode dV/dt 27 c Soldering Recommendations (Peak temperature) For 10 s 300 C Mounting Torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 2 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J e. Limited by maximum junction temperature. S16-1602-Rev. C, 15-Aug-16 Document Number: 91547 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHF6N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -65 thJA C/W Maximum Junction-to-Case (Drain) -4.0 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.73 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 650 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 3 A - 0.5 0.6 DS(on) GS D Forward Transconductance g V = 30 V, I = 3 A - 2 - S fs DS D Dynamic Input Capacitance C - 820 - iss V = 0 V, GS Output Capacitance C -4V = 100 V, 0- oss DS f = 1 MHz Reverse Transfer Capacitance C -4- rss pF Effective Output Capacitance, Energy C -36 - o(er) a Related V = 0 V to 520 V, V = 0 V DS GS Effective Output Capacitance, Time C - 117 - o(tr) b Related Total Gate Charge Q -24 48 g Gate-Source Charge Q -6V = 10 V I = 3 A, V = 520 V- nC gs GS D DS Gate-Drain Charge Q -11- gd Turn-On Delay Time t -14 28 d(on) Rise Time t -12 24 r V = 520 V, I = 3 A, DD D ns V = 10 V, R = 9.1 Turn-Off Delay Time t -3GS g 060 d(off) Fall Time t -2040 f Gate Input Resistance R f = 1 MHz, open drain - 1.4 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 7 S showing the A integral reverse G Pulsed Diode Forward Current I -- 18 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 3 A, V = 0 V - - 1.3 V SD J S GS Reverse Recovery Time t - 237 - ns rr T = 25 C, I = I = 3 A, J F S Reverse Recovery Charge Q -2.2 - C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -16 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-1602-Rev. C, 15-Aug-16 Document Number: 91547 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000