SiHJ6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 700 DS J Low input capacitance (C ) iss R typ. () at 25 C V = 10 V 0.755 DS(on) GS Reduced switching and conduction losses Q max. (nC) 32 g Q (nC) 5 Ultra low gate charge (Q ) g gs Q (nC) 7 gd Avalanche energy rated (UIS) Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PowerPAK SO-8L D APPLICATIONS Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting G - High-intensity discharge (HID) - Fluorescent ballast lighting Consumer S - Adaptors N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SiHJ6N65E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage V 30 GS T = 25 C 5.6 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 3.6 A C a Pulsed Drain Current I 12 DM Linear Derating Factor 0.76 W/C b Single Pulse Avalanche Energy E 36 mJ AS Maximum Power Dissipation P 74 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns c Reverse Diode dV/dt 9.4 Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 120 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 1.6 A. DD J g AS c. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R 52 65 thJA C/W Maximum Junction-to-Case (Drain) R 1.2 1.7 thJC S16-0840-Rev. B, 09-May-16 Document Number: 91589 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHJ6N65E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.8 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 650 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 3 A - 0.755 0.868 DS(on) GS D Forward Transconductance g V = 30 V, I = 3 A - 1.8 - S fs DS D Dynamic Input Capacitance C - 596 - iss V = 0 V, GS Output Capacitance C -3V = 100 V, 5- oss DS f = 1 MHz Reverse Transfer Capacitance C -4- rss pF Effective Output Capacitance, Energy C -26 - o(er) a Related V = 0 V to 520 V, V = 0 V DS GS Effective Output Capacitance, Time C -90 - b o(tr) Related Total Gate Charge Q -16 32 g Gate-Source Charge Q -5V = 10 V I = 3 A, V = 520 V- nC gs GS D DS Gate-Drain Charge Q -7- gd Turn-On Delay Time t -14 28 d(on) Rise Time t -14 28 r V = 520 V, I = 3 A, DD D ns V = 10 V, R = 9.1 GS g Turn-Off Delay Time t -2550 d(off) Fall Time t -1734 f Gate Input Resistance R f = 1 MHz 0.4 0.8 1.6 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 5.6 S showing the A integral reverse G p - n junction diode Pulsed Diode Forward Current I S -- 12 SM Diode Forward Voltage V T = 25 C, I = 3 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 278 556 ns rr T = 25 C, I = I = 3 A, J F S Reverse Recovery Charge Q -2.1 4.2 C rr , V dI/dt = 100 A/s = 25 V R Reverse Recovery Current I -12 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-0840-Rev. B, 09-May-16 Document Number: 91589 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000