SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal design V (V) at T max. 450 DS J - Low area specific on-resistance R max. ( ) at 25 C V = 10 V 0.6 DS(on) GS - Low input capacitance (C ) iss Available Q max. (nC) 30 g - Reduced capacitive switching losses Q (nC) 4 - High body diode ruggedness gs Available - Avalanche energy rated (UIS) Q (nC) 7 gd Optimal efficiency and operation Configuration Single - Low cost D - Simple gate drive circuitry TO-220AB - Low figure-of-merit (FOM): R x Q on g - Fast switching Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 G Note * This datasheet provides information about parts that are S RoHS-compliant and / or parts that are non-RoHS-compliant. For D example, parts with lead (Pb) terminations are not RoHS-compliant. G S Please see the information / tables in this datasheet for details. N-Channel MOSFET APPLICATIONS Consumer electronics - Displays (LCD or plasma TV) Server and telecom power supplies - SMPS Industrial - Welding - Induction heating - Motor drives Battery chargers ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP10N40D-E3 Lead (Pb)-free and Halogen-free SiHP10N40D-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS Gate-Source Voltage 30 V V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 10 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 6 A C a Pulsed Drain Current I 23 DM Linear Derating Factor 1.2 W/C b Single Pulse Avalanche Energy E 194 mJ AS Maximum Power Dissipation P 147 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 24 J dV/dt V/ns d Reverse Diode dV/dt 0.6 c Soldering Recommendations (Peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 13 A. DD J g AS c. 1.6 mm from case. d. I I , starting T = 25 C. SD D J S16-0799-Rev. B, 02-May-16 Document Number: 91497 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP10N40D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -0.85 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V /T -0.53 - V Temperature Coefficient Reference to 25 C, I = 250 A V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3 - 5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 5 A - 0.5 0.6 DS(on) GS D Forward Transconductance g V = 50 V, I = 5 A - 2.7 - S fs DS D Dynamic Input Capacitance C - 526 - iss V = 0 V, GS Output Capacitance C -5V = 100 V, 9- oss DS f = 1 MHz Reverse Transfer Capacitance C -9- rss pF Effective Output Capacitance, Energy C -66 - o(er) a Related V = 0 V, GS V = 0 V to 320 V Effective Output Capacitance, Time DS C -84 - b o(tr) Related Total Gate Charge Q -15 30 g Gate-Source Charge Q -4V = 10 V I = 5 A, V = 320 V- nC gs GS D DS Gate-Drain Charge Q -7- gd Turn-On Delay Time t -12 24 d(on) Rise Time t -18 36 r V = 400 V, I = 10 A, DD D ns Turn-Off Delay Time t -1836 d(off) V = 10 V, R = 9.1 GS g Fall Time t -1428 f Gate Input Resistance R f = 1 MHz, open drain 0.9 1.8 3.6 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 10 S showing the A G integral reverse Pulsed Diode Forward Current I -- 40 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 5 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 230 - ns rr T = 25 C, I = I = 5 A, J F S Reverse Recovery Charge Q -1.6 - C rr , V dI/dt = 100 A/s = 25 V R Reverse Recovery Current I -14 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DS S16-0799-Rev. B, 02-May-16 Document Number: 91497 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000