New Product Si5410DU Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.018 at V = 10 V 12 GS New Thermally Enhanced PowerPAK RoHS 40 10 nC 0.021 at V = 4.5 V 12 COMPLIANT GS ChipFET Package - Small Footprint Area PowerPAK ChipFET Single - Low On-Resistance - Thin 0.8 mm Profile 1 2 100 % UIS Tested Marking Code D D 3 AJ XXX APPLICATIONS D D Lot Traceability 4 and Date Code Load Switch, PA Switch, and Battery D D 8 G Switch for Portable Applications D Part Code 7 DC-DC Synchronous Rectification S 6 G S 5 Bottom View S Ordering Information: Si5410DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V 40 Drain-Source Voltage DS V V 20 Gate-Source Voltage GS a T = 25 C C 12 a T = 70 C C 12 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 9.8 b, c T = 70 C A 7.9 A I 30 Pulsed Drain Current DM a T = 25 C C 12 I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.6 I 19 Single Pulse Avalanche Current AS L = 0.1 mH Single Pulse Avalanche Energy E 18 mJ AS T = 25 C 31 C T = 70 C 20 C Maximum Power Dissipation P W D b, c T = 25 C A 3.1 b, c T = 70 C A 2 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R Maximum Junction-to-Ambient t 5 s 34 40 thJA C/W Steady State R 34 Maximum Junction-to-Case (Drain) thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product Si5410DU Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V Temperature Coefficient V /T 45 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 7 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 6.6 A 0.015 0.018 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6.1 A 0.017 0.021 GS D a g V = 15 V, I = 6.6 A Forward Transconductance 30 S fs DS D b Dynamic Input Capacitance C 1350 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 150 pF oss DS GS Reverse Transfer Capacitance C 70 rss V = 20 V, V = 10 V, I = 9.8 A 21 32 DS GS D Q Total Gate Charge g 10 15 nC Gate-Source Charge Q V = 20 V, V = 4.5 V, I = 9.8 A 4.5 gs DS GS D Q Gate-Drain Charge 3.1 gd Gate Resistance R f = 1 MHz 3.5 g t Turn-On Delay Time 25 40 d(on) t Rise Time V = 20 V, R = 2.5 15 25 r DD L I 7.9 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 12 20 f ns t Turn-On Delay Time 10 15 d(on) t Rise Time V = 20 V, R = 2.5 15 25 r DD L I 7.9 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 22 35 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 12 S C A Pulse Diode Forward Current I 30 SM Body Diode Voltage V I = 7.9 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 40 ns rr Body Diode Reverse Recovery Charge Q 22 35 nC rr I = 7.9 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns Reverse Recovery Rise Time t 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69827 2 S-81448-Rev. B, 23-Jun-08