SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design V (V) at T max. 450 DS J - Low Area Specific On-Resistance R max. at 25 C ()V = 10 V 0.17 DS(on) GS - Low Input Capacitance (C ) iss Q max. (nC) 88 g - Reduced Capacitive Switching Losses Q (nC) 12 - High Body Diode Ruggedness gs - Avalanche Energy Rated (UIS) Q (nC) 23 gd Optimal Efficiency and Operation Configuration Single - Low Cost D - Simple Gate Drive Circuitry TO-220AB - Low Figure-of-Merit (FOM): R x Q on g - Fast Switching Compliant to RoHS Directive 2011/65/EU Note G * Pb containing terminations are not RoHS compliant, exemptions may apply S D G APPLICATIONS S Consumer Electronics N-Channel MOSFET - Displays (LCD or Plasma TV) Lighting Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers SMPS ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP25N40D-E3 Lead (Pb)-free and Halogen-free SiHP25N40D-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS Gate-Source Voltage 30 V V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 25 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 16 A C a Pulsed Drain Current I 78 DM Linear Derating Factor 2.2 W/C b Single Pulse Avalanche Energy E 556 mJ AS Maximum Power Dissipation P 278 W D Operating Junction and Storage Temperature Range T , T - 55 to + 150 C J stg Drain-Source Voltage Slope T = 125 C 24 J dV/dt V/ns d Reverse Diode dV/dt 0.6 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 17 A. DD J g AS c. 1.6 mm from case. d. I I , starting T = 25 C. SD D J S12-0625-Rev. B, 26-Mar-12 Document Number: 91483 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP25N40D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) -0.45 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V /T -0.5 - V Temperature Coefficient Reference to 25 C, I = 250 A V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3 - 5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 13 A - 0.14 0.17 DS(on) GS D Forward Transconductance g V = 50 V, I = 13 A - 7.4 - S fs DS D Dynamic Input Capacitance C - 1707 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 177- pF oss DS f = 1 MHz Reverse Transfer Capacitance C -19- rss Total Gate Charge Q -44 88 g Gate-Source Charge Q -1V = 10 V I = 13 A, V = 320 V2- nC gs GS D DS Gate-Drain Charge Q -23- gd Turn-On Delay Time t -21 42 d(on) Rise Time t -57 86 r V = 320 V, I = 13 A, DD D ns Turn-Off Delay Time t -4V = 10 V, R = 24.6 080 d(off) GS g Fall Time t -3774 f Gate Input Resistance R f = 1 MHz, open drain - 1.8 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 24 S showing the A G integral reverse Pulsed Diode Forward Current I -- 78 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 13 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 353 - ns rr T = 25 C, I = I = 13 A, J F S Reverse Recovery Charge Q -4.4 - C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -24 - A RRM S12-0625-Rev. B, 26-Mar-12 Document Number: 91483 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000