X-On Electronics has gained recognition as a prominent supplier of SiHP30N60E-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SiHP30N60E-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SiHP30N60E-E3 Vishay

SiHP30N60E-E3 electronic component of Vishay
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Part No.SiHP30N60E-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Datasheet: SiHP30N60E-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.658 ea
Line Total: USD 5.66 
Availability - 3692
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3692
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 5.658
10 : USD 4.8185
50 : USD 4.6
100 : USD 4.0595
250 : USD 3.841
500 : USD 3.657
1000 : USD 3.0935
2500 : USD 3.013
5000 : USD 2.99

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SiHP30N60E-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SiHP30N60E-E3 and other electronic components in the MOSFETs category and beyond.

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SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 650 DS J Low input capacitance (C ) iss R max. at 25 C ()V = 10 V 0.125 DS(on) GS Reduced switching and conduction losses Q max. (nC) 130 g Ultra low gate charge (Q ) g Q (nC) 15 gs Avalanche energy rated (UIS) Available Q (nC) 39 gd Material categorization: for definitions of Configuration Single compliance please see www.vishay.com/doc 99912 D APPLICATIONS TO-220AB Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) G Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting S D S - LED lighting G Industrial N-Channel MOSFET - Welding - Induction heating - Motor drives Battery chargers Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP30N60E-E3 Lead (Pb)-free and Halogen-free SiHP30N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 29 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 18 A C a Pulsed Drain Current I 65 DM Linear Derating Factor 2W/C b Single Pulse Avalanche Energy E 690 mJ AS Maximum Power Dissipation P 250 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse Diode dV/dt 18 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S15-0277- Rev. G, 23-Feb-15 Document Number: 91456 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP30N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) -0.5 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V /T -0.64 - V Temperature Coefficient DS J Reference to 25 C, I = 250 A V/C DS D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 2.8 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 600 V, V = 0 V, T = 150 C - - 100 DS GS J Drain-Source On-State Resistance R V = 10 V I = 15 A - 0.104 0.125 DS(on) GS D a Forward Transconductance g V = 8 V, I = 3 A - 5.4 - S fs DS D Dynamic Input Capacitance C - 2600 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 138- oss DS f = 1.0 MHz Reverse Transfer Capacitance C -3- rss pF Effective Output Capacitance, Energy C -98 - b o(er) Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 346 - o(tr) c Related Total Gate Charge Q -85 130 g Gate-Source Charge Q -1V = 10 V I = 15 A, V = 480 V5- nC gs GS D DS Gate-Drain Charge Q -39- gd Turn-On Delay Time t -19 40 d(on) Rise Time t -32 65 r V = 380 V, I = 15 A, DD D ns Turn-Off Delay Time t -6395 d(off) V = 10 V, R = 4.7 GS g Fall Time t -3675 f Gate Input Resistance R f = 1 MHz, open drain - 0.63 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 29 S showing the A integral reverse G Pulsed Diode Forward Current I -- 65 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 15 A, V = 0 V - - 1.3 V SD J S GS Body Diode Reverse Recovery Time t - 402 605 ns rr T = 25 C, I = I = 15 A, J F S Body Diode Reverse Recovery Charge Q -7 15 C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -32 65 A RRM Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS c. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S15-0277- Rev. G, 23-Feb-15 Document Number: 91456 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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