SiHW47N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series V (V) at T max. 650 DS J technology R max. at 25 C ()V = 10 V 0.065 DS(on) GS Reduced t , Q , and I rr rr RRM Low figure-of-merit (FOM) R x Q Q max. (nC) 228 g on g Low input capacitance (C ) Q (nC) 32 iss gs Increased robustness due to low Q rr Q (nC) 62 gd Ultra low gate charge (Q ) g Configuration Single Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D APPLICATIONS TO-247AD Telecommunications - Server and telecom power supplies Lighting - High-intensity lighting (HID) G - Light emitting diodes (LEDs) Consumer and computing G DD - ATX power supplies SS S Industrial - Welding N-Channel MOSFET - Battery chargers Renewable energy - Solar (PV inverters) Switching mode power supplies (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package TO-247AD Lead (Pb)-free and Halogen-free SiHW47N60EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 47 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 29 A C a Pulsed Drain Current I 138 DM Linear Derating Factor 3W/C b Single Pulse Avalanche Energy E 1500 mJ AS Maximum Power Dissipation P 379 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns d Reverse Diode dV/dt 50 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 73.5 mH, R = 25 , I = 6.4 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 500 A/s, starting T = 25 C SD D J S17-0298-Rev. F, 27-Feb-17 Document Number: 91560 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHW47N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) R -0.33 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-Source On-State Resistance R V = 10 V I = 24 A - 0.056 0.065 DS(on) GS D Forward Transconductance g V = 30 V, I = 24 A - 17 - S fs DS D Dynamic Input Capacitance C - 5000 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 220- oss DS f = 1 MHz Reverse Transfer Capacitance C -7- rss pF Effective Output Capacitance, Energy C - 172 - a o(er) Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 634 - o(tr) b Related Total Gate Charge Q - 152 228 g Gate-Source Charge Q -3V = 10 V I = 24 A, V = 480 V2- nC gs GS D DS Gate-Drain Charge Q -62- gd Turn-On Delay Time t -30 60 d(on) Rise Time t -56 84 r V = 480 V, I = 24 A, DD D ns V = 10 V, R = 4.4 Turn-Off Delay Time t -9GS g 1137 d(off) Fall Time t -5684 f Gate Input Resistance R f = 1 MHz, open drain 0.2 0.46 1.0 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 47 S showing the A integral reverse G p - n junction diode Pulsed Diode Forward Current I -- 138 SM S Diode Forward Voltage V T = 25 C, I = 24 A, V = 0 V - 0.9 1.2 V SD J S GS Body Diode Reverse Recovery Time t - 199 398 ns rr T = 25 C, I = I , J F S = 24 A Body Diode Reverse Recovery Charge Q -1.4 2.8 C rr , V dI/dt = 100 A/s = 400 V R Reverse Recovery Current I - 13.2 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-0298-Rev. F, 27-Feb-17 Document Number: 91560 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000