SiHP4N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q on g TO-220AB Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Avalanche energy rated (UIS) Material categorization: for definitions of compliance S D S please see www.vishay.com/doc 99912 G N-Channel MOSFET APPLICATIONS PRODUCT SUMMARY Server and telecom power supplies V (V) at T max. 850 DS J Switch mode power supplies (SMPS) R typ. () at 25 C V = 10 V 1.1 DS(on) GS Power factor correction power supplies (PFC) Q max. (nC) 32 g Lighting Q (nC) 4 gs - High-intensity discharge (HID) Q (nC) 6 gd - Fluorescent ballast lighting Configuration Single Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-220AB Lead (Pb)-free and halogen-free SiHP4N80E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 800 DS V Gate-source voltage V 30 GS T = 25 C 4.3 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 2.7 A C a Pulsed drain current I 11 DM Linear derating factor 0.56 W/C b Single pulse avalanche energy E 56 mJ AS Maximum power dissipation P 69 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dv/dt V/ns d Reverse diode dv/dt 0.3 c Soldering recommendations (peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 2.0 A DD J g AS c. 1.6 mm from case d. I I , di/dt = 100 A/s, starting T = 25 C SD D J S17-1345-Rev. A, 04-Sep-17 Document Number: 92017 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP4N80E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -1.8 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 800 - - V DS GS D V /T -1.1 - V temperature coefficient DS J Reference to 25 C, I = 1 mA V/C DS D Gate-source threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 800 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 640 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 2 A - 1.1 1.27 DS(on) GS D Forward transconductance g V = 30 V, I = 2 A - 1.5 - S fs DS D Dynamic Input capacitance C - 622 - iss V = 0 V, GS Output capacitance C V = 100 V, -34 - oss DS f = 1 MHz Reverse transfer capacitance C -5 - rss pF Effective output capacitance, energy C -21 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C -91 - o(tr) b related Total gate charge Q -16 32 g Gate-source charge Q V = 10 V I = 2 A, V = 480 V -4 - nC gs GS D DS Gate-drain charge Q -6 - gd Turn-on delay time t -12 24 d(on) Rise time t -7 14 r V = 480 V, I = 2 A, DD D ns Turn-off delay time t -26 52 V = 10 V, R = 9.1 d(off) GS g Fall time t -20 40 f Gate input resistance R f = 1 MHz, open drain 0.6 1.2 2.4 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 4.4 S showing the A integral reverse G Pulsed diode forward current I -- 11 S SM p - n junction diode Diode forward voltage V T = 25 C, I = 2 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 248 496 ns rr T = 25 C, I = I = 2 A, J F S Reverse recovery charge Q -1.4 2.8 C rr di/dt = 100 A/s, V = 25 V R Reverse recovery current I -9.2 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 V to 480 V V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 V to 480 V V oss(tr) oss DS DSS S17-1345-Rev. A, 04-Sep-17 Document Number: 92017 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000