SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design V (V) at T max. 450 DS J - Low Area Specific On-Resistance R max. at 25 C ()V = 10 V 1.0 DS(on) GS - Low Input Capacitance (C ) iss Q max. (nC) 18 g - Reduced Capacitive Switching Losses Q (nC) 3 gs - High Body Diode Ruggedness Q (nC) 4 gd - Avalanche Energy Rated (UIS) Configuration Single Optimal Efficiency and Operation - Low Cost D TO-220AB - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): R x Q on g - Fast Switching Material categorization: For definitions of compliance G please see www.vishay.com/doc 99912 S Note D * Lead (Pb)-containing terminations are not RoHS-compliant. G Exemptions may apply. S APPLICATIONS N-Channel MOSFET Consumer Electronics - Displays (LCD or Plasma TV) Server and Telecom Power Supplies - SMPS Industrial - Welding - Induction Heating - Motor Drives Battery Chargers ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP6N40D-E3 Lead (Pb)-free and Halogen-free SiHP6N40D-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage 30 V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 6 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 4 A C a Pulsed Drain Current I 13 DM Linear Derating Factor 0.8 W/C b Single Pulse Avalanche Energy E 104 mJ AS Maximum Power Dissipation P 104 W D Operating Junction and Storage Temperature Range T , T - 55 to + 150 C J stg Drain-Source Voltage Slope T = 125 C 24 J dV/dt V/ns d Reverse Diode dV/dt 0.48 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 9.5 A. DD J g AS c. 1.6 mm from case. d. I I , starting T = 25 C. SD D J S12-0687-Rev. A, 02-Apr-12 Document Number: 91498 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP6N40D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) -1.2 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 250 A -0.53 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3 - 5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 3 A - 0.85 1.0 DS(on) GS D Forward Transconductance g V = 50 V, I = 3 A - 1.7 - S fs DS D Dynamic Input Capacitance C - 311 - iss V = 0 V, GS Output Capacitance C -3V = 100 V, 8- oss DS f = 1 MHz Reverse Transfer Capacitance C -7- rss pF Effective output capacitance, energy C -44 - a o(er) related V = 0 V, GS V = 0 V to 320 V Effective output capacitance, time DS C -54 - o(tr) b related Total Gate Charge Q -9 18 g Gate-Source Charge Q -3V = 10 V I = 3 A, V = 320 V- nC gs GS D DS Gate-Drain Charge Q -4- gd Turn-On Delay Time t -12 24 d(on) Rise Time t -11 22 r V = 400 V, I = 3 A, DD D ns Turn-Off Delay Time t -1428 d(off) V = 10 V, R = 9.1 GS g Fall Time t -816 f Gate Input Resistance R f = 1 MHz, open drain - 1.9 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 6 S showing the A G integral reverse Pulsed Diode Forward Current I -- 24 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 3 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 236 - ns rr T = 25 C, I = I = 3 A, J F S Reverse Recovery Charge Q -1.1 - C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -9 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DS S12-0687-Rev. A, 02-Apr-12 Document Number: 91498 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000
