X-On Electronics has gained recognition as a prominent supplier of SiHP8N50D-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SiHP8N50D-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SiHP8N50D-GE3 Vishay

SiHP8N50D-GE3 electronic component of Vishay
SiHP8N50D-GE3 Vishay
SiHP8N50D-GE3 MOSFETs
SiHP8N50D-GE3  Semiconductors

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See Product Specifications
Part No. SiHP8N50D-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 500V 8A 850mOhm @ 10V
Datasheet: SiHP8N50D-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5875 ea
Line Total: USD 1.59 
Availability - 1907
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1907
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 1.5875
10 : USD 0.972
100 : USD 0.8613
1000 : USD 0.6776
5000 : USD 0.6512
10000 : USD 0.6325
25000 : USD 0.6303

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
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Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SiHP8N50D-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SiHP8N50D-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design V (V) at T max. 550 DS J - Low Area Specific On-Resistance R max. at 25 C ()V = 10 V 0.85 DS(on) GS - Low Input Capacitance (C ) iss Q (max.) (nC) 30 g - Reduced Capacitive Switching Losses Q (nC) 4 gs - High Body Diode Ruggedness Q (nC) 7 - Avalanche Energy Rated (UIS) gd Optimal Efficiency and Operation Configuration Single - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): R x Q on g D - Fast Switching TO-220AB Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Consumer Electronics G - Displays (LCD or Plasma TV) Server and Telecom Power Supplies S D - SMPS G S Industrial - Welding N-Channel MOSFET - Induction Heating - Motor Drives Battery Chargers ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP8N50D-E3 Lead (Pb)-free and Halogen-free SiHP8N50D-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS Gate-Source Voltage 30 V V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 8.7 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 5.5 A C a Pulsed Drain Current I 18 DM Linear Derating Factor 1.25 W/C b Single Pulse Avalanche Energy E 29 mJ AS Maximum Power Dissipation P 156 W D Operating Junction and Storage Temperature Range T , T - 55 to + 150 C J stg Drain-Source Voltage Slope T = 125 C 24 J dV/dt V/ns d Reverse Diode dV/dt 0.37 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 5 A. DD J g AS c. 1.6 mm from case. d. I I , starting T = 25 C. SD D J S12-0691-Rev. A, 02-Apr-12 Document Number: 91488 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHP8N50D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -0.8 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 250 A - 0.58 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3 - 5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 4 A - 0.70 0.85 DS(on) GS D a Forward Transconductance g V = 20 V, I = 4 A - 3 - S fs DS D Dynamic Input Capacitance C - 527 - iss V = 0 V, GS Output Capacitance C -5V = 100 V, 2- oss DS f = 1 MHz Reverse Transfer Capacitance C -8- rss pF Effective Output Capacitance, Energy C -46 - o(er) b Related V = 0 V to 400 V, V = 0 V DS GS Effective Output Capacitance, Time C -64 - c o(tr) Related Total Gate Charge Q -15 30 g Gate-Source Charge Q -4V = 10 V I = 4 A, V = 400 V - nC gs GS D DS Gate-Drain Charge Q -7- gd Turn-On Delay Time t -13 26 d(on) Rise Time t -16 32 r V = 400 V, I = 4 A DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -1g GS 734 d(off) Fall Time t -1122 f Gate Input Resistance R f = 1 MHz, open drain - 1.8 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 8 S showing the A G integral reverse Pulsed Diode Forward Current I -- 32 SM p - n junction diode S Diode Forward Voltage V T = 25 C, I = 4 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 308 - ns rr T = 25 C, I = I = 4 A, J F S Reverse Recovery Charge Q -1.8 - C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -11 - A RRM Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS c. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S12-0691-Rev. A, 02-Apr-12 Document Number: 91488 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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