IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount Available in tape and reel Dynamic dV/dt rating SOT-223 Repetitive avalanche rated G D Logic-level gate drive Available R specified at V = 4 V and 5 V DS(on) GS S Fast switching D G Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the Marking code: LB designer with the best combination of fast switching, ruggedized device design, low on-resistance and PRODUCT SUMMARY cost-effectiveness. The SOT-223 package is designed for surface-mounting V (V) 100 DS using vapor phase, infrared, or wave soldering techniques. R ( )V = 5.0 V 0.54 DS(on) GS Its unique package design allows for easy automatic Q (Max.) (nC) 6.1 pick-and-place as with other SOT or SOIC packages bu t g has the added advantage of improved thermal performance Q (nC) 2.6 gs due to an enlarged tab for heatsinking. Power dissipation of Q (nC) 3.3 gd greater than 1.25 W is possible in a typical surface moun t application. Configuration Single ORDERING INFORMATION Package SOT-223 SiHLL110TR-GE3 Lead (Pb)-free and halogen-free a, b IRLL110TRPbF-BE3 a Lead (Pb)-free IRLL110TRPbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 10 GS T = 25 C 1.5 C Continuous drain current V at 5 V I GS D T = 100 C 0.93 A C a Pulsed drain current I 12 DM Linear derating factor 0.025 W/C e Linear derating factor (PCB mount) 0.017 b Single pulse avalanche energy E 50 mJ AS a Avalanche current I 1.5 A AR a Repetitive avalanche energy E 0.31 mJ AR Maximum power dissipation T = 25 C 3.1 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.0 A c Peak diode recovery dv/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 25 mH, R = 25 , I = 1.5 A (see fig. 12) DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0322-Rev. G, 05-Apr-2021 Document Number: 91320 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLL110, SiHLL110 www.vishay.com Vishay Siliconix e. When mounted on 1 square PCB (FR-4 or G-10 material) THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -60 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 0.90 A - - 0.54 GS D Drain-source on-state resistance R DS(on) V = 4.0 V I = 0.75 A - - 0.76 GS D Forward transconductance g V = 25 V, I = 0.90 A 0.57 - - S fs DS D Dynamic Input capacitance C - 250 - iss V = 0 V, GS Output capacitance C -8V = 25 V, 0- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -15- rss Total gate charge Q -- 6.1 g I = 5.6 A, V = 80 V, D DS Gate-source charge Q --V = 5.0 V 2.6 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --3.3 gd Turn-on delay time t -9.3 - d(on) Rise time t -47 - r V = 50 V, I = 5.6 A, DD D ns R = 12 , R = 8.4 g D Turn-off delay time t -16- d(off) Fall time t -18- f D Between lead, Internal drain inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 1.5 S showing the A integral reverse G a Pulsed diode forward current I -- 12 p - n junction diode SM S b Body diode voltage V T = 25 C, I = 1.5 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 110 130 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.50 0.65 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S21-0322-Rev. G, 05-Apr-2021 Document Number: 91320 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000