SiHH11N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series V (V) at T max. 650 DS J technology R typ. () at 25 C V = 10 V 0.310 DS(on) GS Reduced t , Q , and I rr rr RRM Q max. (nC) 62 g Completely lead (Pb)-free device Q (nC) 7 gs Low figure-of-merit (FOM) R x Q on g Q (nC) 13 gd Low input capacitance (C ) iss Configuration Single Low switching losses due to reduced Q rr Ultra low gate charge (Q ) Pin 4 g PowerPAK 8 x 8 Avalanche energy rated (UIS) Material categorization: for definitions of compliance 4 Pin 1 please see www.vishay.com/doc 99912 1 APPLICATIONS 2 Pin 2 3 Server and telecom power supplies 3 Switch mode power supplies (SMPS) Pin 3 Power factor correction power supplies (PFC) N-Channel MOSFET Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package PowerPAK 8 x 8 Lead (Pb)-free and Halogen-free SiHH11N60EF-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 11 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 7 A C a Pulsed Drain Current I 27 DM Linear Derating Factor 0.9 W/C b Single Pulse Avalanche Energy E 127 mJ AS Maximum Power Dissipation P 114 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns c Reverse Diode dV/dt 28 Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 3 A. DD J g AS c. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S15-2995-Rev. A, 21-Dec-15 Document Number: 91726 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHH11N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R 42 55 thJA C/W Maximum Junction-to-Case (Drain) 0.76 1.10 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 10 mA - 0.66 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 50 DS GS J Drain-Source On-State Resistance R V = 10 V I = 5.5 A - 0.310 0.357 DS(on) GS D Forward Transconductance g V = 30 V, I = 5.5 A - 3.7 - S fs DS D Dynamic Input Capacitance C - 1078 - iss V = 0 V, GS Output Capacitance C -5V = 100 V, 7- oss DS f = 1 MHz Reverse Transfer Capacitance C -4- rss pF Effective Output Capacitance, Energy C -35 - o(er) a Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 145 - o(tr) b Related Total Gate Charge Q -31 62 g Gate-Source Charge Q -7V = 10 V I = 5.5 A, V = 480 V- nC gs GS D DS Gate-Drain Charge Q -13- gd Turn-On Delay Time t -16 32 d(on) Rise Time t -21 42 r V = 480 V, I = 5.5 A, DD D ns V = 10 V, R = 9.1 Turn-Off Delay Time t -3GS g 968 d(off) Fall Time t -2142 f Gate Input Resistance R f = 1 MHz, open drain 0.2 0.7 1.5 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 11 S showing the A integral reverse G Pulsed Diode Forward Current I p - n junction diode -- 27 SM S Diode Forward Voltage V T = 25 C, I = 5.5 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 114 228 ns rr T = 25 C, I = I = 5.5 A, J F S Reverse Recovery Charge Q - 0.56 1.12 C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -9.5 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DS S15-2995-Rev. A, 21-Dec-15 Document Number: 91726 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000