X-On Electronics has gained recognition as a prominent supplier of SIHG47N60AE-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHG47N60AE-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHG47N60AE-GE3 Vishay

SIHG47N60AE-GE3 electronic component of Vishay
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Part No.SIHG47N60AE-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Ch 650V Vds 29nC Qgs
Datasheet: SIHG47N60AE-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.116 ea
Line Total: USD 6.12 
Availability - 195
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
518
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 5.1779
10 : USD 5.161
25 : USD 4.8308

195
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 6.116
25 : USD 4.466
100 : USD 4.279

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIHG47N60AE-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHG47N60AE-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHG47N60AE www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES Low figure-of-merit (FOM) R x Q on g D Low input capacitance (C ) iss TO-247AC Reduced switching and conduction losses Ultra low gate charge (Q ) g G Avalanche energy rated (UIS) Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 D S G APPLICATIONS N-Channel MOSFET Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) PRODUCT SUMMARY Lighting V (V) at T max. 650 DS J - High-intensity discharge (HID) R typ. at 25 C ( )V = 10 V 0.056 DS(on) GS - Fluorescent ballast lighting Q max. (nC) 182 g Industrial Q (nC) 29 gs Q (nC) 62 - Welding gd Configuration Single - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and Halogen-free SiHG47N60AE-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 43 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 27 A C a Pulsed Drain Current I 130 DM Linear Derating Factor 2.5 W/C b Single Pulse Avalanche Energy E 614 mJ AS Maximum Power Dissipation P 313 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 100 J dV/dt V/ns d Reverse Diode dV/dt 8.5 c Soldering Recommendations (Peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 6.6 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S20-0342-Rev. B, 11-May-2020 Document Number: 91888 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHG47N60AE www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) -0.4 R thJC SPECIFICATIONS(T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.72 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 24 A - 0.056 0.065 DS(on) GS D Forward Transconductance g V = 30 V, I = 24 A - 11 - S fs DS D Dynamic Input Capacitance C -3600- iss V = 0 V, GS Output Capacitance C -1V = 100 V, 77- oss DS f = 1 MHz Reverse Transfer Capacitance C -5- rss pF Effective Output Capacitance, Energy C -115 - a o(er) Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C -587 - o(tr) b Related Total Gate Charge Q - 121 182 g Gate-Source Charge Q -2V = 10 V I = 24 A, V = 480 V9- nC gs GS D DS Gate-Drain Charge Q -62- gd Turn-On Delay Time t -34 68 d(on) Rise Time t - 90 135 r V = 480 V, I = 24 A, DD D ns V = 10 V, R = 9.1 Turn-Off Delay Time t -GS g 108162 d(off) Fall Time t -63126 f Gate Input Resistance R f = 1 MHz, open drain 0.3 0.6 1.2 g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 43 S showing the A G integral reverse Pulsed Diode Forward Current I - - 130 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 24 A, V = 0 V - - 1.2 V SD J S GS Body Diode Reverse Recovery Time t - 589 1178 ns rr T = 25 C, I = I = 24 A, J F S Body Diode Reverse Recovery Charge Q - 9.8 19.6 C rr , V dI/dt = 100 A/s = 25 V R Reverse Recovery Current I -24 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S20-0342-Rev. B, 11-May-2020 Document Number: 91888 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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