SiHG47N60AE www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES Low figure-of-merit (FOM) R x Q on g D Low input capacitance (C ) iss TO-247AC Reduced switching and conduction losses Ultra low gate charge (Q ) g G Avalanche energy rated (UIS) Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 D S G APPLICATIONS N-Channel MOSFET Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) PRODUCT SUMMARY Lighting V (V) at T max. 650 DS J - High-intensity discharge (HID) R typ. at 25 C ( )V = 10 V 0.056 DS(on) GS - Fluorescent ballast lighting Q max. (nC) 182 g Industrial Q (nC) 29 gs Q (nC) 62 - Welding gd Configuration Single - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and Halogen-free SiHG47N60AE-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 43 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 27 A C a Pulsed Drain Current I 130 DM Linear Derating Factor 2.5 W/C b Single Pulse Avalanche Energy E 614 mJ AS Maximum Power Dissipation P 313 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 100 J dV/dt V/ns d Reverse Diode dV/dt 8.5 c Soldering Recommendations (Peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 6.6 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S20-0342-Rev. B, 11-May-2020 Document Number: 91888 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHG47N60AE www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) -0.4 R thJC SPECIFICATIONS(T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.72 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 24 A - 0.056 0.065 DS(on) GS D Forward Transconductance g V = 30 V, I = 24 A - 11 - S fs DS D Dynamic Input Capacitance C -3600- iss V = 0 V, GS Output Capacitance C -1V = 100 V, 77- oss DS f = 1 MHz Reverse Transfer Capacitance C -5- rss pF Effective Output Capacitance, Energy C -115 - a o(er) Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C -587 - o(tr) b Related Total Gate Charge Q - 121 182 g Gate-Source Charge Q -2V = 10 V I = 24 A, V = 480 V9- nC gs GS D DS Gate-Drain Charge Q -62- gd Turn-On Delay Time t -34 68 d(on) Rise Time t - 90 135 r V = 480 V, I = 24 A, DD D ns V = 10 V, R = 9.1 Turn-Off Delay Time t -GS g 108162 d(off) Fall Time t -63126 f Gate Input Resistance R f = 1 MHz, open drain 0.3 0.6 1.2 g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 43 S showing the A G integral reverse Pulsed Diode Forward Current I - - 130 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 24 A, V = 0 V - - 1.2 V SD J S GS Body Diode Reverse Recovery Time t - 589 1178 ns rr T = 25 C, I = I = 24 A, J F S Body Diode Reverse Recovery Charge Q - 9.8 19.6 C rr , V dI/dt = 100 A/s = 25 V R Reverse Recovery Current I -24 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S20-0342-Rev. B, 11-May-2020 Document Number: 91888 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000