SiHG70N60AEF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES D Fast body diode MOSFET using E series TO-247AC technology Reduced t , Q , and I rr rr RRM Low figure-of-merit (FOM) R x Q on g G Low switching losses due to reduced Q rr Ultra low gate charge (Q ) g Avalanche energy rated (UIS) S Material categorization: for definitions of compliance D S G please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS Telecommunications PRODUCT SUMMARY - Server and telecom power supplies Lighting V (V) at T max. 650 DS J - High-intensity lighting (HID) R typ. () at 25 C V = 10 V 0.0355 DS(on) GS - Light emitting diodes (LEDs) Q max. (nC) 410 g Consumer and computing Q (nC) 38 gs - ATX power supplies Q (nC) 99 gd Industrial Configuration Single - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switching mode power supplies (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and halogen-free SiHG70N60AEF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS Gate-source voltage 20 V V GS Gate-source voltage AC (f > 1 Hz) 30 T = 25 C 60 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 38 A C a Pulsed drain current I 173 DM Linear derating factor 3.3 W/C b Single pulse avalanche energy E 1019 mJ AS Maximum power dissipation P 417 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dv/dt V/ns d Reverse diode dv/dt 50 c Soldering recommendations (peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 8.5 A DD J g AS c. 1.6 mm from case d. I = 35 A, di/dt = 300 A/s, V = 400 V SD DS S17-1315-Rev. A, 21-Aug-17 Document Number: 91997 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHG70N60AEF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA C/W Maximum junction-to-case (drain) R -0.3 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.62 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 480 V, V = 0 V - - 1 A DS GS Zero gate voltage drain current I DSS V = 480 V, V = 0 V, T = 125 C - - 2 mA DS GS J Drain-source on-state resistance R V = 10 V I = 35 A - 0.0355 0.041 DS(on) GS D a Forward transconductance g V = 30 V, I = 35 A - 23 - S fs DS D Dynamic Input capacitance C - 5348 - iss V = 0 V, GS Output capacitance C V = 100 V, - 238 - oss DS f = 1 MHz Reverse transfer capacitance C -7 - rss pF Effective output capacitance, energy C - 159 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 810 - o(tr) b related Total gate charge Q - 205 410 g Gate-source charge Q V = 10 V I = 35 A, V = 480 V -38 - nC gs GS D DS Gate-drain charge Q -99 - gd Turn-on delay time t -45 90 d(on) Rise time t - 104 208 r V = 480 V, I = 35 A, DD D ns V = 10 V, R = 9.1 GS g Turn-off delay time t - 219 438 d(off) Fall time t - 113 226 f Gate input resistance R f = 1 MHz, open drain 0.5 1.0 2.0 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 60 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I S -- 173 SM Diode forward voltage V T = 25 C, I = 35 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 184 368 ns rr T = 25 C, I = I = 35 A, J F S Reverse recovery charge Q -1.6 3.2 C rr di/dt = 100 A/s, V = 400 V R Reverse recovery current I -16 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-1315-Rev. A, 21-Aug-17 Document Number: 91997 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000