SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 700 DS J Low input capacitance (C ) iss R max. at 25 C ()V = 10 V 0.072 DS(on) GS Reduced switching and conduction losses Q max. (nC) 273 g Q (nC) 46 Ultra low gate charge (Q ) g gs Q (nC) 79 gd Avalanche energy rated (UIS) Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D TO-247AC APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) G Power factor correction power supplies (PFC) S Lighting D - High-intensity discharge (HID) G S - Fluorescent ballast lighting Industrial N-Channel MOSFET - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and Halogen-free SiHG47N65E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage V 30 GS T = 25 C 47 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 30 A C a Pulsed Drain Current I 139 DM Linear Derating Factor 3.3 W/C b Single Pulse Avalanche Energy E 1410 mJ AS Maximum Power Dissipation P 417 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 37 J dV/dt V/ns d Reverse Diode dV/dt 9 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 10 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S15-0291-Rev. D, 23-Feb-15 Document Number: 91557 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHG47N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) -0.3 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D V /T -0.70 - V Temperature Coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 650 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 25 DS GS J Drain-Source On-State Resistance R V = 10 V I = 24 A - 0.060 0.072 DS(on) GS D Forward Transconductance g V = 30 V, I = 24 A - 16.7 - S fs DS D Dynamic Input Capacitance C - 5682 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 251- oss DS f = 1 MHz Reverse Transfer Capacitance C -1- rss pF Effective Output Capacitance, Energy C - 192 - a o(er) Related V = 0 V to 520 V, V = 0 V DS GS Effective Output Capacitance, Time C - 665 - o(tr) b Related Total Gate Charge Q - 182 273 g Gate-Source Charge Q -4V = 10 V I = 24 A, V = 520 V6- nC gs GS D DS Gate-Drain Charge Q -79- gd Turn-On Delay Time t -47 94 d(on) Rise Time t -87 131 r V = 520 V, I = 6 A, DD D ns V = 10 V, R = 9.1 Turn-Off Delay Time t -GS g 156234 d(off) Fall Time t -103206 f Gate Input Resistance R f = 1 MHz, open drain - 0.64 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 47 S showing the A G integral reverse Pulsed Diode Forward Current I -- 139 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 24 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 753 1506 ns rr T = 25 C, I = I = 24 A, J F S Reverse Recovery Charge Q -14 28 C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -28 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S15-0291-Rev. D, 23-Feb-15 Document Number: 91557 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000