X-On Electronics has gained recognition as a prominent supplier of SI5486DU-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5486DU-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI5486DU-T1-GE3 Vishay

SI5486DU-T1-GE3 electronic component of Vishay
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Part No.SI5486DU-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 12A 31W 15mohm @ 4.5V
Datasheet: SI5486DU-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.5786
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.3962
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI5486DU-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5486DU-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si5486DU Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a New Thermally Enhanced PowerPAK V (V) R () Q (Typ.) I (A) DS DS(on) g D ChipFET Package 0.015 at V = 4.5 V 12 GS - Small Footprint Area - Low On-Resistance 0.017 at V = 2.5 V 12 20 21 nC GS - Thin 0.8 mm Profile 0.021 at V = 1.8 V 12 GS Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PowerPAK ChipFET Single APPLICATIONS Load Switch, PA Switch, and for Portable Applications 1 2 Point-of-Load D 3 D D D 4 D D 8 G D 7 S Marking Code 6 S 5 AG XXX G Lot Traceability and Date Code Bottom View Part Code S Ordering Information: Si5486DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V V 8 Gate-Source Voltage GS a T = 25 C 12 C a T = 70 C 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 11.6 b, c T = 70 C A 9.3 A Pulsed Drain Current I 40 DM a T = 25 C C 12 Continuous Source-Drain Diode Current I S b, c T = 25 C 2.6 A T = 25 C 31 C T = 70 C 20 C Maximum Power Dissipation P W D b, c T = 25 C 3.1 A b, c T = 70 C 2 A T , T - 55 to 150 Operating Junction and Storage Temperature Range J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, f t 5 s R 34 40 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 34 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 C/W. Document Number: 73783 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-0194-Rev. C, 28-Jan-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si5486DU Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 21 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.4 GS(th) GS(th) J V V = V , I = 250 A V Gate-Source Threshold Voltage 0.4 1 GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V A 40 On-State Drain Current D(on) DS GS V 4.5 V, I = 7.7 A 0.012 0.015 GS D a R V 2.5 V, I = 7.3 A 0.014 0.017 Drain-Source On-State Resistance DS(on) GS D V 1.8 V, I = 4.8 A 0.017 0.021 GS D a g V = 10 V, I = 7.7 A 46 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2100 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 310 pF oss DS GS C Reverse Transfer Capacitance 180 rss V = 10 V, V = 8 V, I = 9.3 A 36 54 DS GS D Total Gate Charge Q g 21 32 nC Q Gate-Source Charge 3.3 gs V = 10 V, V = 4.5 V, I = 9.3 A DS GS D Gate-Drain Charge Q 3.1 gd R f = 1 MHz Gate Resistance 5 g Turn-on Delay Time t 10 15 d(on) V = 10 V, R = 1.1 t Rise Time DD L 15 25 r I 9.3 A, V = 4.5 V, R = 1 D GEN g Turn-Off Delay Time t 50 75 d(off) t Fall Time 15 25 f ns Turn-On Delay Time t 715 d(on) V = 10 V, R = 1.1 t Rise Time DD L 15 25 r I 9.3 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t 55 85 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 12 S C A I Pulse Diode Forward Current 40 SM V I = 9.1 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 60 ns rr Q Body Diode Reverse Recovery Charge 17 30 nC rr I = 9.3 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 12 a ns t Reverse Recovery Rise Time 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73783 For technical questions, contact: pmostechsupport vishay.com 2 S13-0194-Rev. C, 28-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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