SiHJ10N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D PowerPAK SO-8L Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Avalanche energy rated (UIS) Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS Switch mode power supplies (SMPS) PRODUCT SUMMARY Flyback converter V (V) at T max. 650 DS J Lighting R typ. () at 25 C V = 10 V 0.313 DS(on) GS - High-intensity discharge (HID) Q max. (nC) 50 g - Fluorescent ballast lighting Q (nC) 6 gs Consumer Q (nC) 13 gd - Wall adaptors Configuration Single ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and halogen-free SiHJ10N60E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 10 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 6 A C a Pulsed drain current I 23 DM Linear derating factor 0.71 W/C b Single pulse avalanche energy E 95 mJ AS Maximum power dissipation P 89 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns c Reverse diode dV/dt 26 Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 120 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 2.6 A. DD J g AS c. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R 52 65 thJA C/W Maximum junction-to-case (drain) R 1.0 1.4 thJC S17-0008-Rev. B, 16-Jan-17 Document Number: 91930 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHJ10N60E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.7 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.5 - 4.5 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 5 A - 0.313 0.360 DS(on) GS D Forward transconductance g V = 30 V, I = 5 A - 2.5 - S fs DS D Dynamic Input capacitance C - 784 - iss V = 0 V, GS Output capacitance C -4V = 100 V, 7- oss DS f = 1 MHz Reverse transfer capacitance C -4- rss pF Effective output capacitance, energy C -30 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 145 - o(tr) b related Total gate charge Q -25 50 g Gate-source charge Q -6V = 10 V I = 5 A, V = 480 V- nC gs GS D DS Gate-drain charge Q -13- gd Turn-on delay time t -16 32 d(on) Rise time t -24 48 r V = 480 V, I = 5 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -3GS g 162 d(off) Fall time t -1326 f Gate input resistance R f = 1 MHz 0.4 0.8 1.6 g Drain-Source Body Diode Characteristics MOSFET symbol D -- 10 Continuous source-drain diode current I S showing the A G integral reverse Pulsed diode forward current I -- 23 SM S p - n junction diode Diode forward voltage V T = 25 C, I = 5 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 241 482 ns rr T = 25 C, I = I = 5 A, J F S Reverse recovery charge Q -2.6 5.2 C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -20 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S17-0008-Rev. B, 16-Jan-17 Document Number: 91930 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000