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X-On Electronics has gained recognition as a prominent supplier of SI5457DC-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5457DC-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI5457DC-T1-GE3 Vishay

SI5457DC-T1-GE3 electronic component of Vishay
SI5457DC-T1-GE3 Vishay
SI5457DC-T1-GE3 MOSFETs
SI5457DC-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI5457DC-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 20V 6A 5.7W
Datasheet: SI5457DC-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5115 ea
Line Total: USD 0.51 
Availability - 175711
Ship by Tue. 14 Jan to Thu. 16 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
49
Ship by Thu. 16 Jan to Wed. 22 Jan
MOQ : 51
Multiples : 1
51 : USD 0.3581
211 : USD 0.3086
299 : USD 0.2175

14550
Ship by Thu. 16 Jan to Wed. 22 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.2153
9000 : USD 0.1989
45000 : USD 0.1984

2910
Ship by Thu. 23 Jan to Tue. 28 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5148
10 : USD 0.4172
30 : USD 0.375
100 : USD 0.3216
500 : USD 0.2986
1000 : USD 0.2851

175711
Ship by Tue. 14 Jan to Thu. 16 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5115
10 : USD 0.3201
100 : USD 0.2431
500 : USD 0.2145
1000 : USD 0.2002
3000 : USD 0.1793
9000 : USD 0.1716
45000 : USD 0.1672

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Qg - Gate Charge
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
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Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI5457DC-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5457DC-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si5457DC Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.036 at V = - 4.5 V - 6 GS TrenchFET Power MOSFET a - 20 0.041 at V = - 3.6 V - 6 12.5 nC GS 100 % R Tested g a 0.056 at V = - 2.5 V - 6 GS Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET APPLICATIONS 1 S Portable Devices - Load Switch D - Charger Switch D D - Battery Switch G D D Marking Code - DC/DC Converter BT XXX D G Lot Traceability and Date Code S Part Code D Bottom View P-Channel MOSFET Ordering Information: Si5457DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 12 GS a T = 25 C - 6 C a T = 70 C - 6 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 6 A b, c T = 70 C A - 5.2 A I Pulsed Drain Current - 20 DM T = 25 C - 4.8 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.9 A T = 25 C 5.7 C T = 70 C 3 C Maximum Power Dissipation P W D b, c T = 25 C 2.3 A b, c T = 70 C 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 5 s R 45 55 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 18 22 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 95 C/W. Document Number: 67013 www.vishay.com S10-2011-Rev. A, 06-Sep-10 1New Product Si5457DC Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 14 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.6 - 1.4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS - 1 V = - 20 V, V = 0 V DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 85 C - 5 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 20 A D(on) DS GS V = - 4.5 V, I = - 4.9 A 0.030 0.036 GS D a Drain-Source On-State Resistance R V = - 3.6 V, I = - 4.6 A 0.034 0.041 DS(on) GS D 0.046 0.056 V = - 2.5 V, I = - 2.0 A GS D a Forward Transconductance g V = - 10 V, I = - 4.9 A 16 S fs DS D b Dynamic Input Capacitance C 1000 iss Output Capacitance C V = - 10 V, V = 0 V, f = 1 MHz 225 pF oss DS GS Reverse Transfer Capacitance C 195 rss V = - 10 V, V = - 10 V, I = - 6.5 A 25 38 DS GS D Total Gate Charge Q g 12.5 19 nC Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 6.5 A 2 gs DS GS D Gate-Drain Charge Q 4 gd Gate Resistance R f = 1 MHz 0.9 4.6 9.2 g Turn-On Delay Time t 25 50 d(on) Rise Time t 20 40 V = - 10 V, R = 1.9 r DD L I - 5.2 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 30D GEN g 60 d(off) Fall Time t 12 25 f ns Turn-On Delay Time t 10 20 d(on) Rise Time t 10 20 r V = - 10 V, R = - 1.9 DD L I - 5.2 A, V = - 10 V, R = 1 Turn-Off Delay Time t 27D GEN g 55 d(off) Fall Time t 12 25 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 6 S C A Pulse Diode Forward Current I - 20 SM Body Diode Voltage V I = - 5.2 A, V = 0 V - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 20 40 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = - 5.2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 10 a ns Reverse Recovery Rise Time t 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67013 2 S10-2011-Rev. A, 06-Sep-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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