New Product Si5457DC Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.036 at V = - 4.5 V - 6 GS TrenchFET Power MOSFET a - 20 0.041 at V = - 3.6 V - 6 12.5 nC GS 100 % R Tested g a 0.056 at V = - 2.5 V - 6 GS Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET APPLICATIONS 1 S Portable Devices - Load Switch D - Charger Switch D D - Battery Switch G D D Marking Code - DC/DC Converter BT XXX D G Lot Traceability and Date Code S Part Code D Bottom View P-Channel MOSFET Ordering Information: Si5457DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 12 GS a T = 25 C - 6 C a T = 70 C - 6 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 6 A b, c T = 70 C A - 5.2 A I Pulsed Drain Current - 20 DM T = 25 C - 4.8 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.9 A T = 25 C 5.7 C T = 70 C 3 C Maximum Power Dissipation P W D b, c T = 25 C 2.3 A b, c T = 70 C 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 5 s R 45 55 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 18 22 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 95 C/W. Document Number: 67013 www.vishay.com S10-2011-Rev. A, 06-Sep-10 1New Product Si5457DC Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 14 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.6 - 1.4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS - 1 V = - 20 V, V = 0 V DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 85 C - 5 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 20 A D(on) DS GS V = - 4.5 V, I = - 4.9 A 0.030 0.036 GS D a Drain-Source On-State Resistance R V = - 3.6 V, I = - 4.6 A 0.034 0.041 DS(on) GS D 0.046 0.056 V = - 2.5 V, I = - 2.0 A GS D a Forward Transconductance g V = - 10 V, I = - 4.9 A 16 S fs DS D b Dynamic Input Capacitance C 1000 iss Output Capacitance C V = - 10 V, V = 0 V, f = 1 MHz 225 pF oss DS GS Reverse Transfer Capacitance C 195 rss V = - 10 V, V = - 10 V, I = - 6.5 A 25 38 DS GS D Total Gate Charge Q g 12.5 19 nC Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 6.5 A 2 gs DS GS D Gate-Drain Charge Q 4 gd Gate Resistance R f = 1 MHz 0.9 4.6 9.2 g Turn-On Delay Time t 25 50 d(on) Rise Time t 20 40 V = - 10 V, R = 1.9 r DD L I - 5.2 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 30D GEN g 60 d(off) Fall Time t 12 25 f ns Turn-On Delay Time t 10 20 d(on) Rise Time t 10 20 r V = - 10 V, R = - 1.9 DD L I - 5.2 A, V = - 10 V, R = 1 Turn-Off Delay Time t 27D GEN g 55 d(off) Fall Time t 12 25 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 6 S C A Pulse Diode Forward Current I - 20 SM Body Diode Voltage V I = - 5.2 A, V = 0 V - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 20 40 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = - 5.2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 10 a ns Reverse Recovery Rise Time t 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67013 2 S10-2011-Rev. A, 06-Sep-10