New Product Si5476DU Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.034 at V = 10 V 12 GS New Thermally Enhanced PowerPAK RoHS 60 10.5 nC 0.041 at V = 4.5 V 12 COMPLIANT GS ChipFET Package - Small Footprint Area PowerPAK ChipFET Single - Low On-Resistance - Thin 0.8 mm Profile 1 2 Marking Code APPLICATIONS D D 3 AA XXX Load Switch for Portable Applications D D Lot Traceability 4 and Date Code DC-DC Switch for Low Power Synchronous D D 8 G Rectification D Part Code 7 S Intermediate Switch Driver 6 S G for DC/DC Applications 5 Bottom View S Ordering Information: Si5476DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 60 DS V V Gate-Source Voltage 20 GS a T = 25 C C 12 a T = 70 C C 12 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 7 b, c T = 70 C A 5.6 A I Pulsed Drain Current 25 DM a T = 25 C 12 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.6 I 15 Avalanche Current AS L = 0.1 mH Single Pulse Avalanche Energy E 11.2 mJ AS T = 25 C 31 C T = 70 C 20 C Maximum Power Dissipation P W D b, c T = 25 C A 3.1 b, c T = 70 C A 2 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R Maximum Junction-to-Ambient t 5 s 34 40 thJA C/W Steady State R 34 Maximum Junction-to-Case (Drain) thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product Si5476DU Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 1 mA Drain-Source Breakdown Voltage 60 V DS GS D V Temperature Coefficient V /T 55 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.3 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 60 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 25 A On-State Drain Current D(on) DS GS V = 10 V, I = 4.6 A 0.028 0.034 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4.2 A 0.033 0.041 GS D a g V = 15 V, I = 4.6 A Forward Transconductance 20 S fs DS D b Dynamic Input Capacitance C 1100 iss C V = 30 V, V = 0 V, f = 1 MHz Output Capacitance 90 pF oss DS GS Reverse Transfer Capacitance C 55 rss V = 30 V, V = 10 V, I = 4.6 A 21 32 DS GS D Q Total Gate Charge g 10.5 16 nC Gate-Source Charge Q V = 30 V, V = 4.5 V, I = 4.6 A 3.5 gs DS GS D Q Gate-Drain Charge 4.2 gd Gate Resistance R f = 1 MHz 3.3 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 30 V, R = 5.4 150 225 r DD L I 5.6 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) t Fall Time 60 90 f ns t Turn-On Delay Time 10 15 d(on) t Rise Time V = 30 V, R = 5.4 15 25 r DD L I 5.6 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 22 40 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 12 S C A Pulse Diode Forward Current I 25 SM Body Diode Voltage V I = 5.5 A, V = 0 V 0.85 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 50 ns rr Body Diode Reverse Recovery Charge Q 25 50 nC rr I = 5.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 19 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73663 2 S-81448-Rev. B, 23-Jun-08