New Product Si5471DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, g V (V) R () Q (Typ.) I (A) DS DS(on) g Definition D TrenchFET Power MOSFET 0.020 at V = - 4.5 V - 6 GS Compliant to RoHS Directive 2002/95/EC 0.028 at V = - 2.5 V - 6 - 20 30 nC GS APPLICATIONS 0.062 at V = - 1.8 V - 6 GS Load Switches - Notebook - Netbook 1206-8 ChipFET S 1 D D D G D D D G S D Bottom View P-Channel MOSFET Ordering Information: Si5471DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 12 GS a T = 25 C - 6 C a T = 70 C - 6 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 6 A a, b, c T = 70 C A - 6 A Pulsed Drain Current I - 25 DM T = 25 C - 5.2 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 2.1 A T = 25 C 6.3 C T = 70 C 4 C P Maximum Power Dissipation W D b, c T = 25 C 2.5 A b, c T = 70 C 1.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c, d t 5 s R 40 50 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 15 20 thJF Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 95 C/W. e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. g. T = 25 C. C Document Number: 64988 www.vishay.com S09-1000-Rev. A, 01-Jun-09 1New Product Si5471DC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 14 DS DS J I = - 250 A D mV/C V Temperature Coefficient V /T 3.4 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage - 0.6 - 1.1 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS A V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V - 5 V, V = - 4.5 V 25 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 9.1 A 0.0167 0.020 GS D a R V = - 2.5 V, I = - 7.7 A 0.023 0.028 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 1.6 A 0.0365 0.062 GS D a g V = - 10 V, I = - 9.1 A 30 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2945 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 385 pF oss DS GS C Reverse Transfer Capacitance 370 rss V = - 10 V, V = - 10 V, I = - 9.1 A 64 96 DS GS D Total Gate Charge Q g 30 45 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 9.1 A 6 gs DS GS D Gate-Drain Charge Q 7 gd R Gate Resistance f = 1 MHz 1 5 10 g Turn-on Delay Time t 32 48 d(on) t Rise Time V = - 10 V, R = 1.4 35 53 r DD L I - 7.3 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 70 105 D GEN g d(off) t Fall Time 33 50 f ns Turn-on Delay Time t 918 d(on) t Rise Time V = - 10 V, R = 1.4 816 r DD L t I - 7.3 A, V = - 10 V, R = 1 Turn-Off Delay Time D GEN g 78 117 d(off) t Fall Time 22 33 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 5.2 S C A I Pulse Diode Forward Current 25 SM V I = - 7.3 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 38 ns rr Q Body Diode Reverse Recovery Charge 14 21 nC rr I = - 7.3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 11 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64988 2 S09-1000-Rev. A, 01-Jun-09