X-On Electronics has gained recognition as a prominent supplier of SiHJ7N65E-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SiHJ7N65E-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SiHJ7N65E-T1-GE3 Vishay

SiHJ7N65E-T1-GE3 electronic component of Vishay
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Part No.SiHJ7N65E-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 650V Vds +/-30V Vgs Rds(on) 0.868 @ 10V
Datasheet: SiHJ7N65E-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.4035 ea
Line Total: USD 2.4 
Availability - 2456
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2456
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.4035
10 : USD 2.0355
100 : USD 1.679
250 : USD 1.541
500 : USD 1.4375
1000 : USD 1.2765
3000 : USD 1.1845

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SiHJ7N65E-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SiHJ7N65E-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHJ7N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 700 DS J Low input capacitance (C ) iss R typ. () at 25 C V = 10 V 0.520 DS(on) GS Reduced switching and conduction losses Q max. (nC) 44 g Q (nC) 6 Ultra low gate charge (Q ) g gs Q (nC) 9 gd Avalanche energy rated (UIS) Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D PowerPAK SO-8L Single APPLICATIONS Switch mode power supplies (SMPS) Flyback converter G Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting S Consumer N-Channel MOSFET - Wall adaptors ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SiHJ7N65E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage V 30 GS T = 25 C 7.9 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 5.0 A C a Pulsed Drain Current I 17 DM Linear Derating Factor 0.77 W/C b Single Pulse Avalanche Energy E 68 mJ AS Maximum Power Dissipation P 96 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns d Reverse Diode dV/dt 14 Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 120 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 2.2 A. DD J g AS c. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R 52 65 thJA C/W Maximum Junction-to-Case (Drain) R 1.0 1.3 thJC S16-0659-Rev. A, 18-Apr-16 Document Number: 91823 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHJ7N65E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.8 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 650 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 3.5 A - 0.520 0.598 DS(on) GS D Forward Transconductance g V = 30 V, I = 3.5 A - 2.3 - S fs DS D Dynamic Input Capacitance C - 820 - iss V = 0 V, GS Output Capacitance C -4V = 100 V, 8- oss DS f = 1 MHz Reverse Transfer Capacitance C -4- rss pF Effective Output Capacitance, Energy C -33 - o(er) a Related V = 0 V to 520 V, V = 0 V DS GS Effective Output Capacitance, Time C - 118 - b o(tr) Related Total Gate Charge Q -22 44 g Gate-Source Charge Q -6V = 10 V I = 3.5 A, V = 520 V- nC gs GS D DS Gate-Drain Charge Q -9- gd Turn-On Delay Time t -16 32 d(on) Rise Time t -18 36 r V = 520 V, I = 3.5 A, DD D ns V = 10 V, R = 9.1 GS g Turn-Off Delay Time t -3060 d(off) Fall Time t -1836 f Gate Input Resistance R f = 1 MHz 0.4 0.8 1.6 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 7.9 S showing the A integral reverse G p - n junction diode Pulsed Diode Forward Current I S -- 17 SM Diode Forward Voltage V T = 25 C, I = 3.5 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 299 598 ns rr T = 25 C, I = I = 3.5 A, J F S Reverse Recovery Charge Q -2.9 5.8 C rr , V dI/dt = 100 A/s = 25 V R Reverse Recovery Current I -16 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-0659-Rev. A, 18-Apr-16 Document Number: 91823 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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