X-On Electronics has gained recognition as a prominent supplier of SIHP10N40D-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHP10N40D-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHP10N40D-E3 Vishay

SIHP10N40D-E3 electronic component of Vishay
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Part No.SIHP10N40D-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 400V 600mOhm@10V 10A N-Ch D-SRS
Datasheet: SIHP10N40D-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.8159 ea
Line Total: USD 815.9 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.8159
2000 : USD 0.8084
5000 : USD 0.8084
10000 : USD 0.8084

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Series
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SIHP10N40D-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHP10N40D-E3 and other electronic components in the MOSFETs category and beyond.

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SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal design V (V) at T max. 450 DS J - Low area specific on-resistance R max. ( ) at 25 C V = 10 V 0.6 DS(on) GS - Low input capacitance (C ) iss Available Q max. (nC) 30 g - Reduced capacitive switching losses Q (nC) 4 - High body diode ruggedness gs Available - Avalanche energy rated (UIS) Q (nC) 7 gd Optimal efficiency and operation Configuration Single - Low cost D - Simple gate drive circuitry TO-220AB - Low figure-of-merit (FOM): R x Q on g - Fast switching Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 G Note * This datasheet provides information about parts that are S RoHS-compliant and / or parts that are non-RoHS-compliant. For D example, parts with lead (Pb) terminations are not RoHS-compliant. G S Please see the information / tables in this datasheet for details. N-Channel MOSFET APPLICATIONS Consumer electronics - Displays (LCD or plasma TV) Server and telecom power supplies - SMPS Industrial - Welding - Induction heating - Motor drives Battery chargers ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP10N40D-E3 Lead (Pb)-free and Halogen-free SiHP10N40D-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS Gate-Source Voltage 30 V V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 10 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 6 A C a Pulsed Drain Current I 23 DM Linear Derating Factor 1.2 W/C b Single Pulse Avalanche Energy E 194 mJ AS Maximum Power Dissipation P 147 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 24 J dV/dt V/ns d Reverse Diode dV/dt 0.6 c Soldering Recommendations (Peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 13 A. DD J g AS c. 1.6 mm from case. d. I I , starting T = 25 C. SD D J S16-0799-Rev. B, 02-May-16 Document Number: 91497 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP10N40D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -0.85 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V /T -0.53 - V Temperature Coefficient Reference to 25 C, I = 250 A V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3 - 5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 5 A - 0.5 0.6 DS(on) GS D Forward Transconductance g V = 50 V, I = 5 A - 2.7 - S fs DS D Dynamic Input Capacitance C - 526 - iss V = 0 V, GS Output Capacitance C -5V = 100 V, 9- oss DS f = 1 MHz Reverse Transfer Capacitance C -9- rss pF Effective Output Capacitance, Energy C -66 - o(er) a Related V = 0 V, GS V = 0 V to 320 V Effective Output Capacitance, Time DS C -84 - b o(tr) Related Total Gate Charge Q -15 30 g Gate-Source Charge Q -4V = 10 V I = 5 A, V = 320 V- nC gs GS D DS Gate-Drain Charge Q -7- gd Turn-On Delay Time t -12 24 d(on) Rise Time t -18 36 r V = 400 V, I = 10 A, DD D ns Turn-Off Delay Time t -1836 d(off) V = 10 V, R = 9.1 GS g Fall Time t -1428 f Gate Input Resistance R f = 1 MHz, open drain 0.9 1.8 3.6 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 10 S showing the A G integral reverse Pulsed Diode Forward Current I -- 40 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 5 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 230 - ns rr T = 25 C, I = I = 5 A, J F S Reverse Recovery Charge Q -1.6 - C rr , V dI/dt = 100 A/s = 25 V R Reverse Recovery Current I -14 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DS S16-0799-Rev. B, 02-May-16 Document Number: 91497 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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