SiHW30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 650 DS J Low input capacitance (C ) iss R max. at 25 C ()V = 10 V 0.125 DS(on) GS Reduced switching and conduction losses Q max. (nC) 130 g Ultra low gate charge (Q ) g Q (nC) 15 gs Avalanche energy rated (UIS) Q (nC) 39 gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 APPLICATIONS D Server and telecom power supplies TO-247AD Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting G - High-intensity discharge (HID) - Fluorescent ballast lighting G - LED lighting DD SS S Industrial - Welding N-Channel MOSFET - Induction heating - Motor drives Battery chargers Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-247AD Lead (Pb)-free and Halogen-free SiHW30N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS Gate-Source Voltage 20 V V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 29 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 18 A C a Pulsed Drain Current I 65 DM Linear Derating Factor 2W/C b Single Pulse Avalanche Energy E 690 mJ AS Maximum Power Dissipation P 250 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse Diode dV/dt 18 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S14-1277- Rev. C, 23-Jun-14 Document Number: 91525 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHW30N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) -0.5 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V /T -0.64 - V Temperature Coefficient Reference to 25 C, I = 250 A V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 2.8 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 600 V, V = 0 V, T = 150 C - - 100 DS GS J Drain-Source On-State Resistance R V = 10 V I = 15 A - 0.104 0.125 DS(on) GS D a Forward Transconductance g V = 8 V, I = 3 A - 5.4 - S fs DS D Dynamic Input Capacitance C - 2600 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 138- oss DS f = 1.0 MHz Reverse Transfer Capacitance C -3- rss pF Effective Output Capacitance, Energy C -98 - o(er) b Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 346 - c o(tr) Related Total Gate Charge Q -85 130 g Gate-Source Charge Q -1V = 10 V I = 15 A, V = 480 V5- nC gs GS D DS Gate-Drain Charge Q -39- gd Turn-On Delay Time t -19 40 d(on) Rise Time t -32 65 r V = 380 V, I = 15 A, DD D ns Turn-Off Delay Time t -6395 d(off) V = 10 V, R = 4.7 GS g Fall Time t -3675 f Gate Input Resistance R f = 1 MHz, open drain - 0.63 - g Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I D -- 29 S showing the A G integral reverse Pulsed Diode Forward Current I -- 65 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 15 A, V = 0 V - - 1.3 V SD J S GS Body Diode Reverse Recovery Time t - 402 605 ns rr T = 25 C, I = I = 15 A, J F S Body Diode Reverse Recovery Charge Q -7 15 C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -32 65 A RRM Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS c. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S14-1277- Rev. C, 23-Jun-14 Document Number: 91525 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000