New Product SiR846DP Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0078 at V = 10 V 60 GS TrenchFET Power MOSFET 100 35.7 nC 0.0085 at V = 7.5 V 60 GS 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS Primary Side Switch S 6.15 mm 5.15 mm Isolated DC/DC Converters 1 D S 2 Full Bridge S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR846DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 100 DS V V Gate-Source Voltage 20 GS a T = 25 C C 60 a T = 70 C C 60 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 20 b, c T = 70 C A 16 A I Pulsed Drain Current 100 DM a T = 25 C C 60 I Continuous Source-Drain Diode Current S b, c T = 25 C A 5.6 I Single Pulse Avalanche Current 35 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 61 AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C A 6.25 b, c T = 70 C A 4.0 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 15 20 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.9 1.2 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 54 C/W. Document Number: 65171 www.vishay.com S09-1810-Rev. A, 14-Sep-09 1New Product SiR846DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T I = 250 A - 6.7 mV/C GS(th) GS(th) J D V V = V , I = 250 A Gate-Source Threshold Voltage 1.5 3.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0064 0.0078 GS D a R Drain-Source On-State Resistance DS(on) V = 7.5 V, I = 15 A 0.007 0.0085 GS D a g V = 15 V, I = 20 A 56 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 2870 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 1375 pF oss DS GS Reverse Transfer Capacitance C 83 rss V = 50 V, V = 10 V, I = 20 A 47.5 72 DS GS D Q Total Gate Charge g 35.7 54 nC Q Gate-Source Charge V = 50 V, V = 7.5 V, I = 20 A 10.4 gs DS GS D Q Gate-Drain Charge 9.1 gd R Gate Resistance f = 1 MHz 0.4 1.9 3.6 g t Turn-On Delay Time 15 30 d(on) t Rise Time V = 50 V, R = 2.5 918 r DD L I 20 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 36 70 d(off) t Fall Time 10 20 f ns Turn-On Delay Time t 18 35 d(on) t Rise Time V = 50 V, R = 2.5 10 20 r DD L I 20 A, V = 7.5 V, R = 1 Turn-Off Delay Time t 35 70 D GEN g d(off) t Fall Time 10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 60 S C A a I 100 Pulse Diode Forward Current SM V I = 5 A Body Diode Voltage 0.77 1.1 V SD S Body Diode Reverse Recovery Time t 59 100 ns rr Q Body Diode Reverse Recovery Charge 89 150 nC rr I = 20 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 29 a ns t Reverse Recovery Rise Time 30 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65171 2 S09-1810-Rev. A, 14-Sep-09