New Product SiS444DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition f V (V) R ( ) Max. Q (Typ.) DS DS(on) I (A) g D TrenchFET Power MOSFET g 0.0033 at V = 10 V GS 35 100 % R and UIS Tested g 30 33.5 nC g 0.0043 at V = 4.5 V Compliant to RoHS Directive 2002/95/EC GS 35 APPLICATIONS PowerPAK 1212-8 Motor Control Industrial Load Switch S ORing 3.30 mm 3.30 mm 1 S D 2 S 3 G 4 D 8 D 7 D G 6 D 5 Bottom View S Ordering Information: N-Channel MOSFET SiS444DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage GS 20 g T = 25 C 35 C g T = 70 C 35 C I Continuous Drain Current (T = 150 C) D J a, b T = 25 C 24.9 A a, b T = 70 C 20 A A I Pulsed Drain Current (t = 300 s) DM 70 g T = 25 C 35 C I Continuous Source-Drain Diode Current S a, b T = 25 C 3.3 A I Single Pulse Avalanche Current 20 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy AS 20 T = 25 C 52 C T = 70 C 33 C P Maximum Power Dissipation W D a, b T = 25 C 3.7 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range J stg - 55 to 150 C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, e t 10 s R 24 33 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 C/W. f. Based on T = 25 C. C g. Package limited. Document Number: 63276 www.vishay.com S12-0215-Rev. B, 30-Jan-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiS444DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V /T V Temperature Coefficient 30 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 30 A D(on) DS GS V 10 V, I = 10 A 0.0026 0.0033 GS D a R Drain-Source On-State Resistance DS(on) V 4.5 V, I = 7 A 0.0034 0.0043 GS D a Forward Transconductance g V = 15 V, I = 10 A 65 S fs DS D b Dynamic C Input Capacitance 3065 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 406 pF oss DS GS C Reverse Transfer Capacitance 360 rss V = 15 V, V = 10 V, I = 10 A 68 102 DS GS D Q Total Gate Charge g 33.5 51 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 7.7 gs DS GS D Q Gate-Drain Charge 13.8 gd R Gate Resistance f = 1 MHz 0.3 0.7 1.4 g Turn-On Delay Time t 24 45 d(on) t Rise Time V = 15 V, R = 1.5 24 45 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 32 60 d(off) Fall Time t 12 24 f ns t Turn-On Delay Time 14 28 d(on) Rise Time t 13 26 V = 15 V, R = 1.5 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 33 60 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 35 S C A I Pulse Diode Forward Current 70 SM V I = 3 A, V 0 V Body Diode Voltage 0.7 1.1 V SD S GS t Body Diode Reverse Recovery Time 21 40 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 9 a ns t Reverse Recovery Rise Time 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63276 2 S12-0215-Rev. B, 30-Jan-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000