New Product SiZ702DT Vishay Siliconix N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) Q (Typ.) Definition DS DS(on) D g TrenchFET Power MOSFETs a Channel-1 0.0120 at V = 10 V GS 16 100 % R and UIS Tested g and 30 6.8 nC a 0.0145 at V = 4.5 V Compliant to RoHS Directive 2002/95/EC GS 16 Channel-2 APPLICATIONS Notebook System Power PowerPAIR 6 x 3.7 POL Low Current DC/DC 3.73 mm Pin 1 G 1 D 1 1 D 1 2 D 1 D 1 3 G 1 G S /D 2 1 2 N-Channel 1 S /D S (Pin 7) MOSFET 1 2 2 6 6 mm S 2 5 4 G 2 Ordering Information: N-Channel 2 SiZ702DT-T1-GE3 (Lead (Pb)-free and Halogen-free) MOSFET S 2 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Channel-1Channel-2Unit V 30 Drain-Source Voltage DS V V 20 Gate-Source Voltage GS a T = 25 C C 16 a T = 70 C C 16 Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C 13.8 14 A b, c b, c T = 70 C 11 11.2 A A I Pulsed Drain Current 50 DM a a T = 25 C 16 C 16 I Source Drain Current Diode Current S b, c b, c T = 25 C A 3.2 3.7 I Single Pulse Avalanche Current 18 AS L = 0.1 mH E Single Pulse Avalanche Energy 16 mJ AS T = 25 C 27 30 C T = 70 C 17.4 19 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 3.9 4.5 b, c b, c T = 70 C A 2.5 2.9 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Parameter Symbol Typ. Max. Typ. Max. Unit b, f Maximum Junction-to-Ambient t 10 s R 24 32 21 28 thJA C/W R Maximum Junction-to-Case (Drain) Steady State 3.5 4.6 3.2 4.2 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 C/W for channel-1 and for channel-2. Document Number: 65525 www.vishay.com S11-2379-Rev. B, 28-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiZ702DT Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Ch-1 Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D Ch-2 Ch-1 V Temperature Coefficient V /T I = 250 A 33 DS DS J D Ch-2 mV/C Ch-1 V Temperature Coefficient V /T I = 250 A - 5 GS(th) GS(th) J D Ch-2 Ch-1 Gate Threshold Voltage V V = V , I = 250 A 12.5V GS(th) DS GS D Ch-2 Ch-1 Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS Ch-2 Ch-1 V = 30 V, V = 0 V 1 DS GS Ch-2 Zero Gate Voltage Drain Current I A DSS Ch-1 V = 30 V, V = 0 V, T = 55 C 5 DS GS J Ch-2 Ch-1 b I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS Ch-2 Ch-1 V = 10 V, I = 13.8 A 0.010 0.012 GS D Ch-2 b R Drain-Source On-State Resistance DS(on) Ch-1 V = 4.5 V, I = 12.6 A 0.012 0.0145 GS D Ch-2 Ch-1 b g V = 10 V, I = 13.8 A 47 S Forward Transconductance fs DS D Ch-2 a Dynamic Ch-1 C Input Capacitance 790 iss Ch-2 Ch-1 C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 190 pF oss DS GS Ch-2 Ch-1 C Reverse Transfer Capacitance 76 rss Ch-2 Ch-1 V = 15 V, V = 10 V, I = 13.8 A 14 21 DS GS D Ch-2 Q Total Gate Charge g Ch-1 6.8 11 Ch-2 nC Ch-1 Q V = 15 V, V = 4.5 V, I = 13.8 A Gate-Source Charge 2.6 gs DS GS D Ch-2 Ch-1 Q Gate-Drain Charge 1.9 gd Ch-2 Ch-1 R Gate Resistance f = 1 MHz 0.4 2 4 g Ch-2 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com Document Number: 65525 2 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000