X-On Electronics has gained recognition as a prominent supplier of SIZ790DT-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIZ790DT-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIZ790DT-T1-GE3 Vishay

SIZ790DT-T1-GE3 electronic component of Vishay
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Part No.SIZ790DT-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 16A / 35A Dual N-Ch MOSFET
Datasheet: SIZ790DT-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.721
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.4818
10 : USD 1.2247
100 : USD 0.9374
500 : USD 0.8014
1000 : USD 0.7046
3000 : USD 0.7046
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.6994
10 : USD 1.3981
100 : USD 1.0799
500 : USD 0.928
1000 : USD 0.7328
3000 : USD 0.6834
6000 : USD 0.6496
9000 : USD 0.6255
24000 : USD 0.6062
N/A

Obsolete
   
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We are delighted to provide the SIZ790DT-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIZ790DT-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.0093 at V = 10 V GS 16 SkyFET Monolithic TrenchFET Channel-1 30 7.7 nC a Power MOSFETs and Schottky Diode 0.0130 at V = 4.5 V 16 GS 100 % R and UIS Tested g a 0.0047 at V = 10 V 35 GS Compliant to RoHS Directive 2002/95/EC Channel-2 30 17 nC a 0.0059 at V = 4.5 V 35 GS APPLICATIONS D 1 System Power - Notebook PowerPAIR 6 x 3.7 - Server Pin 1 G 1 POL 3.73 mm G1 1 D 1 Synchronous Buck 2 D 1 N-Channel 1 Converter S /D 1 2 D 1 MOSFET 3 G S /D 2 1 2 Schottky Pin 7 S Diode 2 G2 6 6 mm S 2 5 N-Channel 2 MOSFET 4 S 2 Ordering Information: SiZ790DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Channel-1Channel-2Unit V 30 Drain-Source Voltage DS V Gate-Source Voltage V 20 GS a a T = 25 C 16 35 C a a T = 70 C 16 35 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C 12.9 23.4 A b, c b, c T = 70 C A 10.3 18.7 A I Pulsed Drain Current (t = 300 s) 70 100 DM a a T = 25 C 16 35 C I Continuous Source Drain Diode Current S b, c b, c T = 25 C A 3.2 3.8 I Single Pulse Avalanche Current 16 30 AS L = 0.1 mH Single Pulse Avalanche Energy E 13 45 mJ AS T = 25 C 27 48 C T = 70 C 17 31 C Maximum Power Dissipation P W D b, c b, c T = 25 C 3.9 4.6 A b, c b, c T = 70 C A 2.5 3 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Parameter Symbol Typ. Max. Typ. Max. Unit b, f t 10 s R 24 32 20 27 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 3.5 4.6 2 2.6 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 C/W for channel-1 and 65 C/W for channel-2. Document Number: 67669 www.vishay.com S11-2380-Rev. B, 28-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiZ790DT Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V = 0 V, I = 250 A Ch-1 30 GS D V Drain-Source Breakdown Voltage DS V = 0 V, I = 250 A Ch-2 30 GS D V V = V , I = 250 A Ch-1 1 2.2 DS GS D V Gate Threshold Voltage GS(th) V = V , I = 250 A Ch-2 1.1 2.2 DS GS D Ch-1 100 Gate Source Leakage I V = 0 V, V = 20 V nA GSS DS GS Ch-2 100 V = 30 V, V = 0 V Ch-1 1 DS GS V = 30 V, V = 0 V Ch-2 50 200 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C Ch-1 5 DS GS J V = 30 V, V = 0 V, T = 55 C Ch-2 140 1400 DS GS J V 5 V, V = 10 V Ch-1 15 DS GS b I A On-State Drain Current D(on) V 5 V, V = 10 V Ch-2 20 DS GS V = 10 V, I = 15 A Ch-1 0.0075 0.0093 GS D V = 10 V, I = 20 A Ch-2 0.0038 0.0047 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 13 A Ch-1 0.0105 0.0130 GS D V = 4.5 V, I = 20 A Ch-2 0.0048 0.0059 GS D V = 15 V, I = 15 A Ch-1 48 DS D b g S Forward Transconductance fs V = 15 V, I = 20 A Ch-2 85 DS D a Dynamic Ch-1 830 C Input Capacitance iss Channel-1 Ch-2 1980 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch-1 185 C Output Capacitance pF oss Ch-2 455 Channel-2 Ch-1 80 V = 10 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss Ch-2 165 V = 15 V, V = 10 V, I = 15 A Ch-1 15.6 24 DS GS D V = 15 V, V = 10 V, I = 20 A Ch-2 36 54 DS GS D Q Total Gate Charge g Ch-1 7.7 12 Channel-1 Ch-2 17 26 nC V = 15 V, V = 4.5 V, I = 15 A DS GS D Ch-1 2.6 Q Gate-Source Charge gs Ch-2 5.7 Channel-2 Ch-1 3 V = 15 V, V = 4.5 V, I = 20 A DS GS D Q Gate-Drain Charge gd Ch-2 5 Ch-1 0.2 1 2 R Gate Resistance f = 1 MHz g Ch-2 0.2 0.9 1.8 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com Document Number: 67669 2 S11-2380-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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