X-On Electronics has gained recognition as a prominent supplier of SI1315DL-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1315DL-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1315DL-T1-GE3 Vishay

SI1315DL-T1-GE3 electronic component of Vishay
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Part No.SI1315DL-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 78-SI1317DL-T1-GE3
Datasheet: SI1315DL-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.0992
12000 : USD 0.0955
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.4986
10 : USD 0.3339
100 : USD 0.2261
500 : USD 0.1809
1000 : USD 0.1356
3000 : USD 0.1264
N/A

Obsolete
0
MOQ : 100
Multiples : 1
100 : USD 0.1645
250 : USD 0.1593
500 : USD 0.1546
1000 : USD 0.1499
2500 : USD 0.1456
5000 : USD 0.1417
N/A

Obsolete
   
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RoHS - XON
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Continuous Drain Current
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Forward Transconductance - Min
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We are delighted to provide the SI1315DL-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1315DL-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si1315DL Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition c V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET 0.336 at V = - 4.5 V - 0.9 GS 100 % R Tested g - 8 0.450 at V = - 2.5 V - 0.7 1 nC GS Compliant to RoHS Directive 2002/95/EC 0.650 at V = - 1.8 V - 0.5 GS APPLICATIONS Load Switch for Portable Devices DC/DC Converters SOT-323 SC-70 (3-LEADS) G 1 S 3 D G S 2 Top View Si1315DL (LJ)* D * Marking Code P-Channel MOSFET Ordering Information: Si1315DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 8 DS V V Gate-Source Voltage 8 GS T = 25 C - 0.9 C T = 70 C - 0.7 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 0.8 A a, b T = 70 C - 0.7 A A I - 3 Pulsed Drain Current DM T = 25 C - 0.3 C I Continuous Source-Drain Diode Current S T = 25 C - 0.25 A T = 25 C 0.4 C T = 70 C 0.2 C Maximum Power Dissipation P W D a, b T = 25 C 0.3 A a, b T = 70 C 0.2 A Operating Junction and Storage Temperature Range T , T - 50 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Based on T = 25 C. C Document Number: 67193 www.vishay.com S10-2765-Rev. A, 29-Nov-10 1New Product Si1315DL Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b Maximum Junction-to-Ambient t 10 s R 315 375 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 285 340 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 430 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 8 V DS GS D V Temperature Coefficient V /T - 7.6 DS DS J I = - 250 A mV/C D V /T 2.0 V Temperature Coefficient GS(th) J GS(th) Gate-Source Threshold Voltage V - 0.4 - 0.8 V V = V , I = - 250 A GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = - 8 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I - 5 V, V = - 4.5 V - 2 A V D(on) DS GS 0.280 0.336 V = - 4.5 V, I = - 0.8 A GS D a Drain-Source On-State Resistance R V = - 2.5 V, I = - 0.5 A 0.375 0.450 DS(on) GS D V = - 1.8 V, I = - 0.3 A 0.500 0.650 GS D a Forward Transconductance g V = - 5 V, I = - 0.8 A 3S fs DS D b Dynamic Input Capacitance C 112 iss Output Capacitance C 54V = - 4 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 40 rss V = - 4 V, V = - 4.5 V, I = - 0.8 A 1.7 3.4 DS GS D Total Gate Charge Q g 12 nC Gate-Source Charge Q V = - 4 V, V = - 2.5 V, I = - 0.8 A 0.3 gs DS GS D Gate-Drain Charge Q 0.4 gd Gate Resistance R f = 1 MHz 1.4 7 14 g Turn-On Delay Time t 10 20 d(on) Rise Time t 15 23 V = - 4 V, R = 5.7 r DD L I - 0.7 A, V = - 4.5 V, R = 1 Turn-Off DelayTime t 1421 D GEN g d(off) Fall Time t 816 f ns Turn-On Delay Time t 510 d(on) Rise Time t 10 20 V = - 4 V, R = 5.7 r DD L I - 0.7 A, V = - 8 V, R = 1 Turn-Off DelayTime t 1220 D GEN g d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 0.3 S C A a Pulse Diode Forward Current I - 3 SM Body Diode Voltage V I = - 0.7 A - 0.8 - 1.2 V SD F Body Diode Reverse Recovery Time t 14 21 ns rr Body Diode Reverse Recovery Charge Q 48 nC rr I = - 0.7 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 8 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67193 2 S10-2765-Rev. A, 29-Nov-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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