Si1031R/X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (mA) DS DS(on) D Definition 8 at V = - 4.5 V - 150 GS High-Side Switching Low On-Resistance: 8 12 at V = - 2.5 V - 125 GS - 20 Low Threshold: 0.9 V (typ.) 15 at V = - 1.8 V - 100 GS Fast Switching Speed: 45 ns 20 at V = - 1.5 V - 30 GS TrenchFET Power MOSFETs: 1.5 V Rated ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories SC-75A or SC-89 Battery Operated Systems Power Supply Converter Circuits G 1 Load/Power Switching Cell Phones, Pagers SC-75A (SOT-416): Si1031R SC-89 (SOT-490): Si1031X BENEFITS 3 D Ease in Driving Switches Low Offset (Error) Voltage S 2 Marking Code: H Low-Voltage Operation Top View High-Speed Circuits Low Battery Voltage Operation Ordering Information: Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Si1031R Si1031X Parameter Symbol Unit 5 s Steady State 5 s Steady State V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 6 GS T = 25 C - 150 - 140 - 165 - 155 A a I Continuous Drain Current (T = 150 C) D J T = 85 C - 110 - 100 - 150 - 125 A mA a Pulsed Drain Current I - 500 - 600 DM a I - 250 - 200 - 340 - 240 Continuous Source Current (Diode Conduction) S T = 25 C 280 250 340 300 A a P mW Maximum Power Dissipation D T = 85 C 145 130 170 150 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. Document Number: 71171 www.vishay.com S10-2544-Rev. D, 08-Nov-10 1Si1031R/X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.40 - 1.2 V GS(th) DS GS D V = 0 V, V = 2.8 V 0.5 1.0 DS GS Gate-Body Leakage I A GSS V = 0 V, V = 4.5 V 1.0 2.0 DS GS V = - 16 V, V = 0 V - 1 - 500 nA DS GS Zero Gate Voltage Drain Current I DSS V = - 16 V, V = 0 V, T = 85 C - 10 A DS GS J a I V = - 5 V, V = - 4.5 V - 200 mA On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 150 mA 8 GS D V = - 2.5 V, I = - 125 mA 12 GS D a R Drain-Source On-State Resistance DS(on) V = - 1.8 V, I = - 100 mA 15 GS D V = - 1.5 V, I = - 30 mA 20 GS D a Forward Transconductance g V = - 10 V, I = 150 mA 0.4 S fs DS D a V I = - 150 mA, V = 0 V Diode Forward Voltage - 1.2 V SD S GS b Dynamic Q Total Gate Charge 1500 g Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 150 mA 150 pC gs DS GS D Q Gate-Drain Charge 450 gd Turn-On Delay Time t 55 d(on) t Rise Time V = - 10 V, R = 65 30 r DD L ns I - 150 mA, V = - 4.5 V, R = 10 Turn-Off Delay Time t 60 D GEN g d(off) t Fall Time 30 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise noted) A 0.5 500 2 V V = 5 V thru 2.5 V T = - 55 C GS J 0.4 25 C 400 125 C 1.8 V 0.3 300 0.2 200 0.1 100 0.0 0 0123456 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 71171 2 S10-2544-Rev. D, 08-Nov-10 I - Drain Current (A) D I - Drain Current (mA) D